The Review of Laser Engineering
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
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Volume 16, Issue 2
Displaying 1-4 of 4 articles from this issue
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  • [title in Japanese]
    Tadashi ARUGA
    1988 Volume 16 Issue 2 Pages 56-57
    Published: February 28, 1988
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.16.56
    JOURNAL FREE ACCESS
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  • Frequency Response of Electro-Striction Assembly for Laser Frequency Control
    Yoshiaki AKIMOTO
    1988 Volume 16 Issue 2 Pages 58-62
    Published: February 28, 1988
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.16.58
    JOURNAL FREE ACCESS
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    Dynamic response of an electro-striction assembly for laser frequency control has been measured by a simple method and been theoretically analyzed. The resonantphenomenon of the electro-striction assembly occurs at the rather lower frequency than its natural frequency of the electro-striction element. Its resonant frequency was given as a function of a laser mirror mass and a compliance of silicon glue which used to the assemble of parts such as electro-striction element, laser mirror and so on. The experimental results were in fairly well agreement with theoretical ones within a measurement error.
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  • Growth of the Output Power of an Optically Pumped CW Far Infrared Laser
    Rate Equation and Maxwell-Bloch Equation
    Kyouji MATSUSHIMA, Noburu SOKABE, Akira MURAI
    1988 Volume 16 Issue 2 Pages 63-74
    Published: February 28, 1988
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.16.63
    JOURNAL FREE ACCESS
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    Growth of the output power of an optically-pumped CH3OH FIR laser has been observed by an intracavity Stark-switching technique and discussed by a two-level model. The output power shows a relaxation oscillation similar to the one observed previously on many solid state lasers. The curves of growth calculated using a rate equation approximation fail to fit the observations, when the buildup time of the output power becomes comparable to or shorter than the relaxation time of polarization of the lasing medium. In that case, Maxwell-Bloch type equations, which give more precise description of the model than the rate equation, yield curves of growth in better agreement with the observations.
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  • Deposition of Crystalline Silicon Films using Excimer Laser
    Masataka MURAHARA, Nozomu TAKAHASHI, Koichi TOYODA, Susumu NAMBA
    1988 Volume 16 Issue 2 Pages 75-81
    Published: February 28, 1988
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.16.75
    JOURNAL FREE ACCESS
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    Single crystalline silicon films were grown on the polycrystalline silicon substrate at 450°C substrate temperature using an ArF excimer laser. Laser beams were irradiated simultaneously parallel and perpendicular to the substrate. The focused parallel beam induced two photon decomposition of SiH4 near the surface of a substrate to produce radicals. Amorphous silicon films were deposited by parallel irradiation only, and poly or single crystalline silicon films were grown with the additional perpendicular irradiation. Crystallinity was confirmed by measurements of refraction index, optical band gap, infrared absorption, electron diffraction and X-ray diffraction.
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