All issues
Volume 48, Issue 10
Special Issue on Highly Functionalized Silicon Photonics by Hybrid-Material Integration
Displaying 1-9 of 9 articles from this issue
- |<
- <
- 1
- >
- >|
Special Issue on Highly Functionalized Silicon Photonics by Hybrid-Material Integration
Special Issue
Laser Review
-
Takasumi TANABE2020 Volume 48 Issue 10 Pages 518-
Published: 2020
Released on J-STAGE: October 31, 2022
JOURNAL FREE ACCESSThis issue features hybrid integrated silicon photonic that could break the conventional limits of monolithic silicon integration. Recent high-capacity internet and fast data processing demand the speed and low-energy consumption of optical devices. It is now not an easy task to satisfy these demands only with silicon. Emerging hybrid-integration technologies with materials such as InP, Ge, Graphen, Magneto-optical material, nanophotonic elements, and polymers will break the limit of current silicon photonics.View full abstractDownload PDF (211K) -
Nobuhiko NISHIYAMA2020 Volume 48 Issue 10 Pages 520-
Published: 2020
Released on J-STAGE: October 31, 2022
JOURNAL FREE ACCESSIn this paper, various low temperature direct bonding technologies are reviewed toward III-V/Si heterogeneous integration. By introducing heterogeneous integration, superior characteristics that we cannot achieve by photonic devices with single element materials can be realized. These photonic devices and integrated circuit are essential for future Terabit-class photonic module.View full abstractDownload PDF (1003K) -
Shinji MATSUO2020 Volume 48 Issue 10 Pages 525-
Published: 2020
Released on J-STAGE: October 31, 2022
JOURNAL FREE ACCESSWe report InP-based semiconductor lasers integrated on SiO2/Si. By integrating thin film (membrane) lasers on SiO2, the optical confinement factor of the active layer can be made to be two to three times as large as that of conventional lasers. Thus, the semiconductor laser can be directly modulated with low power consumption. It also describes other advantages such as the ability to fabricate a buried heterostructure and the ability to grow an active layer on a Si substrate, since thin films can be overcome the problem of the difference of thermal expansion difference between InP and Si.View full abstractDownload PDF (1336K) -
Rai KOU,, Atsushi ISHIZAWA, Nobuyuki MATSUDA, Koji YAMADA2020 Volume 48 Issue 10 Pages 530-
Published: 2020
Released on J-STAGE: October 31, 2022
JOURNAL FREE ACCESSSi has large 3rd-order nonlinearity with excellent material transparency ranging from near-infrared (NIR) to mid-infrared (MIR) regions. With the recent progress of Si photonics technology, various functional devices applying the nonlinear optical effect have contributed to each field from basic science to industrial applications. In the first half of this paper, we review the recent advances by the use of the outstanding material nature of Si in MIR. Our novel suspended nonlinear Si waveguide enables a broadband spectrum generation that covers the MIR range. In the second half, we apply Si to a versatile hybrid photonic integration platform to further enhance optical nonlinearity with graphene, which has recently been recognized as an ultimately high nonlinear material.View full abstractDownload PDF (1294K) -
Mitsuru TAKENAKA, Shinichi TAKAGI2020 Volume 48 Issue 10 Pages 535-
Published: 2020
Released on J-STAGE: October 31, 2022
JOURNAL FREE ACCESSGermanium (Ge) has many interesting optical and electrical properties, enabling unique optoelectronic integrated circuits operating at near-infrared and mid-infrared wavelengths. To integrate a Ge thin membrane on Si, we have developed direct wafer bonding and Smart-cutTM for Ge. Through the process optimization, we have successfully obtained a high-quality Ge-on-insulator (GeOI) wafer. Using a GeOI wafer, we have fabricated a near-infrared Ge photodetector monolithically integrated with an amorphous Si waveguide. Since Ge is transparent at mid-infrared wavelengths from 2 μm to 14 μm, we have proposed a Ge mid-infrared photonic integrated circuit on a GeOI wafer. We have demonstrated ultrasmall Ge waveguide components as well as carrier-injection optical modulators and defect-mediated photodetectors.View full abstractDownload PDF (1472K) -
Yuya SHOJI, Tetsuya MIZUMOTO2020 Volume 48 Issue 10 Pages 540-
Published: 2020
Released on J-STAGE: October 31, 2022
JOURNAL FREE ACCESSIn this work, the fabrication and working of a novel waveguide optical isolator for silicon photonic platforms, operating in the transverse electric (TE) mode, have been presented. The waveguide optical isolator has been realized using the upper cladding layer of a magneto-optical material and its fabrication has been performed using the direct bonding technology. The magneto-optical effect seen in planar waveguides and their polarization dependence has been discussed.View full abstractDownload PDF (1142K) -
Yasutomo OTA, Satoshi IWAMOTO, Yasuhiko ARAKAWA2020 Volume 48 Issue 10 Pages 545-
Published: 2020
Released on J-STAGE: October 31, 2022
JOURNAL FREE ACCESSHybrid integration is a key technology for augmenting the functionality of integrated photonic circuits. Conventional hybrid integration approaches, such as wafer bonding and direct growth, offer the path for monolithic integration, but are often accompanied with significant complications in the integration processes. Here, we discuss a novel technique termed transfer printing, which uses an elastomeric stamp to perform flexible pick-and-place assembly of photonic devices on a chip. With this technique, it is possible to integrate various photonic elements after the completion of the entire fabrication processes of the base photonic chips, facilitating hybrid integration on matured integrated photonic platforms, such as silicon photonics. We review the application of transfer printing for assembling various nanophotonic elements on silicon photonic chips, with a particular focus on the integration of quantum-dot single photon sources. We also address other nanophotonic devices realized using transfer printing, such as plasmonic resonators defined on atomically-flat silver surfaces.View full abstractDownload PDF (913K) -
Takaaki ISHIGURE, Yui KOBAYASHI2020 Volume 48 Issue 10 Pages 550-
Published: 2020
Released on J-STAGE: October 31, 2022
JOURNAL FREE ACCESSIn order to realize low-loss connection between silicon waveguides and conventional single-mode fibers, single-mode tapered polymer optical waveguides are fabricated using the Mosquito method, which work as a spot-size converter (SSC). In this research, the axially taper shaped core is formed by accelerating the needle scanning velocity during the core dispense. For effective spot-size conversion, we demonstrate both theoretically and experimentally that the monomer diffusion between the core and cladding during the Mosquito method is a key. The fabricated 8-mm long tapered waveguide with perfect circular core cross sections exhibits an effective MFD conversion from 4.1 μm to 7.5 μm, allowing an insertion loss as low as 1.89 dB at 1550-nm wavelength.View full abstractDownload PDF (528K)
Regular Paper
Laser Original
-
Yota YAMAMOTO, Nobuyuki MASUDA, Hirotaka NAKAYAMA, Tomoyoshi SHIMO ...2020 Volume 48 Issue 10 Pages 555-
Published: 2020
Released on J-STAGE: May 27, 2025
JOURNAL FREE ACCESSThe electroholography has attracted research attention as an ideal 3D technology, which places less challenge on the viewer. Although the head-mounted displays development process has been conducted, it has not been successfully achieved due to the computational overhead. In this paper, we proposed a special- purpose computer using the Xilinx ZYNQ MPSoC. The proposed system comprises an ARM CPU and FPGA on a single chip. Thus, a computer-generated hologram of 1920 × 1080 pixels can be calculated at ten fps from the 95949-point cloud, and the performance is 275 times faster compared to the Intel Core i5-8400 having six cores.View full abstractDownload PDF (1312K)
- |<
- <
- 1
- >
- >|