The Review of Laser Engineering
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
Volume 22, Issue 12
Displaying 1-7 of 7 articles from this issue
  • Takio TOMIMASU
    1994 Volume 22 Issue 12 Pages 961-962
    Published: December 29, 1994
    Released on J-STAGE: February 26, 2010
    JOURNAL FREE ACCESS
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  • Elucidating the Most Fundamental Aspect of Electron Transfer Mehcanisms by Meansof Ultrafast Laser Photolysis Studies on Distance-Fixed Porphyrin-Quinone Dyads
    Noboru MATAGA
    1994 Volume 22 Issue 12 Pages 963-968
    Published: December 29, 1994
    Released on J-STAGE: February 26, 2010
    JOURNAL FREE ACCESS
    General problems in relation to the investigations on the photosynthetic reaction centermodels including bichromophoric as well as multichromophoric systems are discussed. Moreover, the most fundamental aspects of electron transfer (ET) mechanisms are discussedon the basis of the results obtained by ultrafast laser photolysis studies on distance-fixedporphyrin-quinone dyads. The quite different nature of ET in the inverted region from that inthe normal region is demonstrated.
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  • Investigations into Photo-Reaction Dynamics and Mechanisms of Photosynthetic Reaction Center Models and Proteins
    Noboru MATAGA
    1994 Volume 22 Issue 12 Pages 969-976
    Published: December 29, 1994
    Released on J-STAGE: February 26, 2010
    JOURNAL FREE ACCESS
    The multi-step and superexchange electron transfer mechanisms which are necessary for therapid formation of long-lived ion-pair state are discussed on the basis of our pioneering ultrafastlaser photolysis studies on multichromophoric photosynthetic reaction center models. Inaddition, results of our studies on time-resolved fluorescence decay of tryptophan in proteinare discussed from the viewpoint of protein dynamics which is an important basis for the elucidationof enzyme reactions.
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  • Yoshiaki HASEGAWA, Takashi EGAWA, Takashi JIMBO, Masayoshi UMENO
    1994 Volume 22 Issue 12 Pages 977-984
    Published: December 29, 1994
    Released on J-STAGE: February 26, 2010
    JOURNAL FREE ACCESS
    Using electroluminescence topography, we observed that a rapid degradation of an AlGaAs/GaAs quantum-well laser on Si was caused by the rapid growth of <100> dark linedefects (DLD's), and that the growth velocity was strongly dependent on the injected currentdensity. A typical lifetime of the AlGaAs/GaAs laser on Si was a few minutes. In contrast, weobserved that the growth of <110> DLD's for an AlGaAs/In0.07Ga0.93As strained quantum well laser on Si was slow compared with that of <100> DLD's, the longest life time observedin the present study was about 24 hours. This result indicates that the degradation mechanismof the A1GaAs/InGaAs laser on Si is different from that of AlGaAs/GaAs laser on Si. The improved life time seems to be caused by not only tensile stress reduction but also dislocation pinningdue to the introduction of indium in the GaAs active layer.
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  • Yoji MARUTANI, Takashi NAKAI
    1994 Volume 22 Issue 12 Pages 985-992
    Published: December 29, 1994
    Released on J-STAGE: February 26, 2010
    JOURNAL FREE ACCESS
    In our previous work, a method of fabricating solid models was developed by using an ultravioletlaser. It is intended in this study to apply a CO2 laser for making solid models, so as toreduce the cost of the system and the fabricating time. A thin liquid layer of cationic epoxy resin (thermosetting resin) was irradiated with CW CO2 laser light (9.5W, 10.6 μm) to be solidified. It was proved that irradiation with high power laser light caused explosive chain thermopolymerization, and the operating ranges for controllable reaction could be enlarged by fillinginert plastic powder in the resin. A solid model of 20 mm square in bottom and 10 mm in hightwas constructed by repeating laser radiation on resin over the solidified layer 20 times.
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  • Jun YAMADA, Hiroto SANNOU, Yoshiyuki UCHIDA, Hideo FURUHASHI
    1994 Volume 22 Issue 12 Pages 993-999
    Published: December 29, 1994
    Released on J-STAGE: February 26, 2010
    JOURNAL FREE ACCESS
    A demand for non-contact measurements in processes is increasing, especially for threedimensionalmeasuerment. The three-dimensional measurement device based on laser trigonometryusing a scanning parallel beam has been developed. The device is capable of measuringthe shape of an object at high speeds, because the output voltage is proportional to themeasured shape. A measurement device with two cylindrical lenses as a focusing lens has alsobeen made. It is suitable for measurement of the shape of a wide and thin object like a plate. The measurement error is found to be below ±40 μm.
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  • Chikao NAGASAWA, Makoto ABO, Kenji KIMIYAMA, Osamu UCHINO
    1994 Volume 22 Issue 12 Pages 1000-1006
    Published: December 29, 1994
    Released on J-STAGE: February 26, 2010
    JOURNAL FREE ACCESS
    This paper describes DIAL techniques for water vapor measurements in the atmosphere usingtwo narrowband (<500MHz) Ti: sapphire lasers pumped with a frequency doubled Nd: YAG laser. Photoacoustic spectroscopy (PAS) cells are designed for tuning the laser line tothe water vapor absorption line. Moreover, a quasi-simultaneous DIAL system with a time lagof 100ms between a pair of an on-line laser shot and an off-line laser shot is developed. The result of water vapor DIAL measurement was consistent with one measured by a Raman lidar atthe same lidar site simultaneously. The goal of the present investigation is an airborne watervapor DIAL.
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