The Review of Laser Engineering
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
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Volume 15, Issue 2
Displaying 1-8 of 8 articles from this issue
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  • [title in Japanese]
    Mitsuhito SAKAGUCHI
    1987 Volume 15 Issue 2 Pages 68-69
    Published: February 28, 1987
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.15.68
    JOURNAL FREE ACCESS
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  • Current Status and Future Plans for the Free Electron Laser at University of California, Santa Barbara
    Yoshiaki TSUNAWAKI
    1987 Volume 15 Issue 2 Pages 70-74
    Published: February 28, 1987
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.15.70
    JOURNAL FREE ACCESS
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  • Application of Far Infrared Free Electron Laser to Condensed Matter Physics
    Mitsuhiro MOTOKAWA
    1987 Volume 15 Issue 2 Pages 75-82
    Published: February 28, 1987
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.15.75
    JOURNAL FREE ACCESS
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    Following an overview of far-infrared spectroscopy in condensed matter physics, possibility and advantage of application of far-infrared free electron laser to this field are discussed. If a laser induced phase transition occurs due to strong pumping to an excited state, it may be the most interesting phenomenon. Tunable and strong power FEL is very useful as a versatile light source in the far-infrared region. Some examples of possible experiments are described.
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  • Laser Light Assisted Deposition of Thin Films
    Hiroyuki YOKOYAMA
    1987 Volume 15 Issue 2 Pages 83-97
    Published: February 28, 1987
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.15.83
    JOURNAL FREE ACCESS
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    Photoassisted chemical vapor deposition of metal films, and photoassisted epitaxy of semiconductor films are described with an emphasis on several important problems. Successful applications of laser induced metal deposition for reparing photolithographic masks' pinhole defects and for circuit restructuring of semiconductor devices are demonstrated. With explaining these examples, however, intrinsic problems are pointed out regarding micropattern formation by projection printing deposition using large cross-sectional laser light. A new approach that would enable the photolithographyless film patterning in large area is shown. Next, several studies on photoassisted epitaxy of semiconductors are briefly reviewed from the view point of epitaxy temperature lowering. After extracting the expected photoinduced effects, an experiment of photoassisted Zn S film deposition is described to clarify the surface adatom rearrangement effect which is essentially important for lower-ing the epitaxial growth temperature.
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  • Internal-Mirror He-Ne Laser Stabilization by Using Heat Pipes
    Akira SASAKI, Kimitoshi KATO, Takuro ITO
    1987 Volume 15 Issue 2 Pages 98-105
    Published: February 28, 1987
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.15.98
    JOURNAL FREE ACCESS
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    An internal-mirror He-Ne (λ=633 nm) laser tube is mounted in a duralumin box which is thermally connected to other box attached thermo-elements, via heat pipes. The output power and the frequency of the laser are stabilized by two simple method. First, the total back beam intensity detected with a silicon photodiode is fed to a heater wound around the laser tube. The output stability of±0.15% and the frequency stability of ±1.3×10-8 are obtained over a period of 10 min or longer. Second, the laser tube temperature detected with a thermistor is fed to a heater. The output stability of ×0.3% and the frequency stability of ±4.5×10-8 are obtained over a period of 10 min or longer. This method does not use the laser beam intensity, thus the optical-feedback effect does not affect the laser stabilization.
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  • Amplification of Tunable Infrared Diode Laser Using Optically Pumped NH3 under High-Pressures
    Hitoshi SAITO, Hideo TASHIRO, Keigo NAGASAKA, Koichi TOYODA, Susumu NA ...
    1987 Volume 15 Issue 2 Pages 106-112
    Published: February 28, 1987
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.15.106
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    Gain characteristics of highly pressurized NH3 gas have been studied in detail for amplification of tunable radiation from a Pb1-x Te diode laser. The gain of optically pumped media was measured as a function of pressures of NH3 and buffer gases up to 10 atm. The amplification factor obtained through a cell was found to be more than ten times. A continuously extended width of the gain profile was approximately 30 GHz. Comparison between N2 and He as a buffer gas has also been made.
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  • Processing of Glass Micro Lens Array by CO2 Laser
    Kaoru SUZUKI, Tetsuya TANIYAMA, Junji NAKATA, Takaya MASUTANI
    1987 Volume 15 Issue 2 Pages 113-119
    Published: February 28, 1987
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.15.113
    JOURNAL FREE ACCESS
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    Micro lens arrays were processed in glass plates by the irradiation of carbon dioxide (CO2) laser. In order to process many lenses in one glass plate, a lens was made by using a focusing beam of CO2 laser. Based on those experimental evidences, micro lens arrays have been formed with 3×3 lenses of the maximum refractive index difference of 0.001, the lens radius of 300 μm and the 2 mm intervals.
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  • Report on IAEA Conference on Plasma Science and Controlled Thermo-Nuclear Fusion
    Chiyoe YAMANAKA, Sadao NAKAI, Kunioki MIMA, Kazuo IMASAKI
    1987 Volume 15 Issue 2 Pages 120-129
    Published: February 28, 1987
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.15.120
    JOURNAL FREE ACCESS
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