The Review of Laser Engineering
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
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Volume 17, Issue 3
Displaying 1-9 of 9 articles from this issue
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  • [title in Japanese]
    Yoshinobu AOYAGI
    1989 Volume 17 Issue 3 Pages 163-164
    Published: March 28, 1989
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.17.3_163
    JOURNAL FREE ACCESS
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  • Phase Modulation of Ultrashort Laser Pulses
    Takashi JIMBO, Ping P. HO, R. R. ALFANO
    1989 Volume 17 Issue 3 Pages 165-173
    Published: March 28, 1989
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.17.3_165
    JOURNAL FREE ACCESS
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    Supercontinuum generation, i. e., the production of intense ultrashort broadband pulses by passing picosecond laser pulses through condensed media is reviewed. The generation mechanism includes self-phase modulation, four-photon parametric generation, cross-phase modulation, and induced-phase modulation.
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  • Effect of CO2 Laser Irradiation on Fluoride-Coated Dental Enamel
    Takeyoshi NAKAYAMA, Yuji HORINO, Noriaki MATSUNAMI, Uichi KUBO
    1989 Volume 17 Issue 3 Pages 174-181
    Published: March 28, 1989
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.17.3_174
    JOURNAL FREE ACCESS
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    Extracted human dental enamel coated with silver ammonium fluoride (Ag (NH3) 2F) was irradiated with pulsed CO2 laser. The implantation of F atoms into enamel was observed. The depth distribution of the laser-implanted F and Ag atoms and its laser energy density dependence were investigated by Rutherford backscattering spectromet ry and resonance nuclearreaction. The maximum depth of implanted F atoms was observed at the laser energy density of12 J/cm2 and was found to be about 0.8 μm. This value is about 2.5 times larger than the case of unirradiated enamel. On the other hand, the depth distribution of Ag atoms was not influenced by laser irradiation.
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  • Numerical Calculation of the Shapes Machined with a Pulsed YAG Laser (6th Report)
    Calculated Results for Several Kinds of Metals
    Takehiro WATANABE, Yoshitaro YOSHIDA, Chikara SHIMO
    1989 Volume 17 Issue 3 Pages 182-190
    Published: March 28, 1989
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.17.3_182
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    The present paper reports the study on the machined shapes of metals whose thermal constants are clarified only in room temperature. The calculation is carried out under the following conditions. (1) In the solid phase, the thermal conductivities λ and the thermal diffusivities χ in room temperature are used; (2) In the liquid phase of pure metals, the half values of λ and χ at room temperature are used; and (3) In the liquid phase of alloys, the double values of λ and χ at room temperature are used. The results are summarized as follows;
    (1) In the area of drilling without residual melt of metals whose thermal conductivities are less than about 0.4J/cm·s·deg, the calculation precisions are within 10% of the experimental values. Even though machining of metals whose thermal conductivities are more than0.4J/cm·s·deg and machining in area including residual melt, sufficient precision is obtained by introducing the temperature-dependencies of thermal constants. (2) Actual machining processes are simulated by the calculating method shown in this paper. (3) Diameters calculated at the surface of workpieces are in good agreement with those obtained by experiments in the region of removal machining independently of thermal constants. (4) Machining conditions are decidedeasily by thecomputer simulation described above.
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  • Ultrafast Switching Characteristics of Bistable Surface-Emitting MQW-DBR Lasers
    Keisuke KOJIMA, Kazuo KYUMA
    1989 Volume 17 Issue 3 Pages 191-198
    Published: March 28, 1989
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.17.3_191
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    Bistable surface-emitting MQW-DBR laser diodes have been fabricated for applications to optical computing. The output power was 2mW and the contrast was greater than 50: 1. They can be switched-on by the trigger lights injected from the surface. Therefore, they can be applied to two-dimensional arrays. The switching time with an optical trigger input was as short as 50 ps. The minimum switching power and energy required for the switching was 1mW and 5pJ, respectively.
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  • Laser Heterodyne Spectrometer for Monitoring Atmospheric Minor Constituents
    Mitsuo ISHIZU, Toshikazu ITABE
    1989 Volume 17 Issue 3 Pages 199-210
    Published: March 28, 1989
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.17.3_199
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    An infrared laser heterodyne spectrometer has been developed to measure solar absorption lines of atmospheric minor constituents by using a PbSnTe diode laser and a CO2 laser as local oscillators. The system is capable of operating aboard an airplane in order to detect stratospheric molecules in very low concentrations by observing the sun near sunset or sunrise at the horizontal direction. The test operation on the ground shows that the sensitivity of the photomixer attains the quantum noise limit when a diode laser as well as a CO2 laser is used and the number of absorption lines of stratospheric ozone are successfully measured.
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  • Deposition of a-Si: H/a-SiC: H Multilayer Film by Excimer Laser CVD
    Toshihiro TAGUCHI, Yasushi KAMEDA, Hiroyuki KUSHIDA, Koichi TOYODA, Sh ...
    1989 Volume 17 Issue 3 Pages 211-219
    Published: March 28, 1989
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.17.3_211
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    The deposition of a-Si: H/a-SiC: H multilayer film by ArF excimer laser chemical vapor deposition has been demonstrated. Each layer thickness was determined from a reactant gas pressure and a laser irradiation time. The XPS spectrum of the multilayer films shows that the chemical component of each layer changes periodically with an Ar ion etching time and X-ray diffraction intensity of the films shows that the period is in good agreement with the value calculated from the deposition rate. The optical measurement of the films shows that the optical bandgap of the multilayer films increased with decreasing a-Si: H layer thickness. The result can be interpreted in terms of the electron quantum confinement effect in the band structure of an amorphous semiconductor.
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  • Report on the 13th International Conference on Infrared and Millimeter Waves
    Yoshiaki TSUNAWAKI, Akio YASUDA
    1989 Volume 17 Issue 3 Pages 220-225
    Published: March 28, 1989
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.17.3_220
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  • [title in Japanese]
    1989 Volume 17 Issue 3 Pages plate1
    Published: March 28, 1989
    Released on J-STAGE: March 17, 2010
    DOIhttps://doi.org/10.2184/lsj.17.3_plate1
    JOURNAL FREE ACCESS
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