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Zbigniew M. Stadnik, Yoriyoshi Kawai
1984 Volume 53 Issue 8 Pages
2761-2770
Published: August 15, 1984
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Magnetic properties of single crystals of the non-stoichiometric spinel Zn
0.36Mn
0.57Fe
2.07O
4 have been studied by
57Fe Mössbauer spectroscopy. The divalent Fe ions are located only at octahedral sites. The cation distribution was deduced from a spectrum taken with a large magnetic field applied to the sample. A value of the lattice constant was calculated from the distribution and is consistent with a value measured by X-ray diffraction. The magnetic moments of Fe ions are shown to be collinear. Mössbauer spectra confirm that below about 240 K the easy magnetic axis is along the [111] direction. A significant influence of residual stress anisotropy on the intensities of Zeeman lines is observed at temperatures close to 240 K.
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Yuji Matsuda, Yuji Ito, Masakazu Nishi
1984 Volume 53 Issue 8 Pages
2771-2777
Published: August 15, 1984
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EPR line widths and the resonance field of CsFeS
2, the quasi one-dimensional alternating antiferromagnet, are measured as a function of the angle between the chain axis and the external applied field, and of the temperature over the range of 100 K and 500 K. The line widths are much broader than those of the similar compounds like KFeS
2, which is the usual quasi one-dimensional antiferromagnet; and the relaxation mechanism responsible for the extra line width is attributed to the singlet ground state of the alternating chain system.
Although the observed angular and temperature dependence of the line width could well be explained by the short time spin correlation due to the intra-chain exchange interaction; for the shift of the resonance field towards the higher field side irrespective of the applied field direction as temperature is lowered, no satisfactory explanation was found.
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Jun Hatano, Fujio Suda, Fumihiro Aikawa, Hideo Futama, Bozena Hilczer
1984 Volume 53 Issue 8 Pages
2778-2783
Published: August 15, 1984
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Spiral patterns due to screw dislocation have been revealed by a charged-powder deposition technique on cleavage surfaces in {0001} growth region of ferroelectric guanidinium aluminum sulfate hexahydrate crystals grown from aqueous solution of high temperatures (60°C–95°C). The patterns are observed not as surface topography on the natural faces of crystal, but as charge distribution on the cleavage surfaces in the crystal. Dislocation etch pits found at the center of the spirals are direct evidence for the spiral growth of crystal along the trigonal axis. The rotational motion of the spiral patterns during crystal growth is discussed on the basis of the spiral growth theory.
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Minoru Sumita, Toshio Osaka, Yasuharu Makita
1984 Volume 53 Issue 8 Pages
2784-2789
Published: August 15, 1984
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Dielectric, pyroelectric and thermal properties of the crystals of monoclinic Rb
1−xCs
xD
2PO
4 system were studied from −190°C to 120°C. The phase diagram of the system was established in the whole range of
x. The crystal of
x=0 has three phases denoted as I, II and III in order of the descending temperature. As
x increases from zero, a ferroelectric IV phase appears between the phases III and II, and the temperature range of the phase TV spreads. The III–IV and IV–I transition entropies are distinctly small in comparison with those for the III–II, II–I and IV–II transitions.
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Kiyoshi Deguchi, Shin-ichi Sato, K\={o}ji Hirano, Eiji Nakamura
1984 Volume 53 Issue 8 Pages
2790-2798
Published: August 15, 1984
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Dielectric dispersion has been studied for several crystals of Rb
2ZnCl
4 prepared under different conditions in the frequency range from 10
3 Hz to 10
9 Hz around the incommensurate-commensurate phase transition temperature
Tc. Although the dielectric dispersion of the relaxational type is observed for all the crystals, the apparent critical slowing down is found only for the less defective crystals in which the relaxation is monodispersive in the temperature range
T>
Tc+5 K, but becomes polydispersive near
Tc in the incommensurate phase. In the defective crystals, a wide distribution of the relaxation times was observed in the whole temperature range of the incommensurate phase.
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Kenichi Mizuno, Atsuo Matsui, G. J. Sloan
1984 Volume 53 Issue 8 Pages
2799-2806
Published: August 15, 1984
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Polarized absorption spectra of tetracene (naphthacene) single crystals have been investigated between 300 and 13 K, with particular emphasis on the
b-polarized spectrum. The low energy tails of the
a- and
b-polarized first absorption bands are expressed by the Urbach rule with the steepness coefficients σ
a′=1.37±0.12, σ
b′=1.58±0.13, with which possibility of self-trapping of excitons is discussed along with the dimensionality of tetracene crystals. The exciton-phonon coupling constants are found to be
ga=1.09±0.1 and
gb=0.95±0.08, consistent with luminescence experiments which show that excitons in tetracene are self-trapped very shallowly. The line halfwidth, the oscillator strength of the first and the second absorption bands, refractive indices, and surface exciton structure are briefly discussed.
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Yoshihiro Ohmura, Tadasu Suzuki
1984 Volume 53 Issue 8 Pages
2807-2817
Published: August 15, 1984
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Inelastic scattering of X-rays by an inner-shell electron in solids is treated theoretically under the condition of 2π
a⁄λ
0<1 and 10
I\gtrsimhν
0\gtrsim
I, where λ
0 and hν
0 are a wavelength and an energy of the incident X-rays and
a and
I are the radius and the ionization energy of the inner-shell electron, respectively. In this case, the contribution by the
p·
A-term in the Hamiltonian is not negligible compared to that by the
A2-term, but gives an appreciable
p·
A band in the scattering spectrum. As an example, the scattering of soft X-rays by
K-electrons in lithium is treated. The result shows the cross-over of the spectral intensity from the
A2-term dominant Raman band to the
p·
A-term dominant band as hν
0 becomes smaller. An experiment using the monochromatic bright radiation from an undulator equipped in a synchrotron orbit would be useful to confirm the present theory.
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Atsuo Matsui, Kenichi Mizuno, Hitoshi Nishimura
1984 Volume 53 Issue 8 Pages
2818-2827
Published: August 15, 1984
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Low temperature luminescence and absorption spectra in β-perylene crystals are investigated. Zero-phonon transitions in which self-trapped exciton states participate in as the initial or final state are found below 30 K. The self-trap depth for the shallower self-trapped exciton state is found to be 95 cm
−1 and for the deeper self-trapped exciton state 187 cm
−1. Lattice configurations for self-trapped states are suggested to be one-center type for the deeper self-trapped exciton state and two-center type for the shallower self-trapped exciton state. Based on the discussion about the intensities of zero-phonon lines, it is suggested that phonons of the energies of 13.3 cm
−1 are taking part in relaxating free excitons into the shallower self-trapped excitons and 22 cm
−1 into the deeper self-trapped excitons.
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Hiroshi Dohi, Yuji Kuwamura, Masuo Fukui, Osamu Tada
1984 Volume 53 Issue 8 Pages
2828-2832
Published: August 15, 1984
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We have numerically and experimentally investigated the propagation characteristics of surface plasmon polaritons (SP’s) in metal films bounded by materials with very similar refractive indices. The calculation indicates that the SP’s can propagate over macroscopic distances in the visible region. ATR experiments for angle scans (glass prism-index matching oil-Ag film-Pyrex glass) have shown that a propagation length of ∼200 μm can be readily gotten at 632.8 nm wavelength under an appropriate condition.
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Yoshitomo Yokota, Masuo Fukui, Osamu Tada
1984 Volume 53 Issue 8 Pages
2833-2836
Published: August 15, 1984
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We have determined the plasma frequency and the relaxation time of electrons in the infrared region for heavily doped Si crystal through the excitation of surface plasmon polaritons (SP’s). The dispersion relations of SP’s on n
+-Si have been theoretically and experimentally obtained.
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Tomoyuki Matsuura, Takashi Fujikawa, Hiroyuki \={O}yanagi
1984 Volume 53 Issue 8 Pages
2837-2844
Published: August 15, 1984
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X-ray absorption near edge structure (XANES) spectra for crystalline GaAs and ZnSe are measured for each K-edge region. Full multiple scattering calculations are also performed. The information on the charge distribution around the X-ray absorbed atom can be obtained if we compare the experimental XANES spectra with full multiple scattering calculations. In these systems core hole potential is important to analyse the spectra.
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Masaharu Tokunaga
1984 Volume 53 Issue 8 Pages
2845-2850
Published: August 15, 1984
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A simple phenomenological theory is presented to discuss the origin of elastic “
central peaks” observed near structural phase transition temperatures by light scattering. The scattering intensity
IC of light from the polarization induced around a charge impurity is formulated on the analogy of the Huang scattering of X-rays. The dependence of
IC on the direction of the scattering wave vector and temperature has been numerically computed and is found to reproduce well the experimental results in KD
2PO
4. The theory is shown to be applicable to the “
central peak” due to the strain induced around an elastic defect observed in KH
2PO
4 or KH
3(1−x)D
3x(SeO
3)
2.
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Tatsuo Iwasa, Yoshiro Suzuki, Tomoyuki Nakayama, Fumio Tokunaga, Masam ...
1984 Volume 53 Issue 8 Pages
2851-2856
Published: August 15, 1984
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The reverse photoreaction from batho-intermediate of bacteriorhodopsin has been investigated by picosecond laser flash photolysis at 6.5 K. Upon exciting batho-intermediate with 694 nm light pulse of 31±4 ps width, the increase of absorbance around 570 nm and concomitant decrease of that around 630 nm are observed without delay time. Based on the above result, the models for the primary photochemical reaction of bacteriorhodopsin are discussed.
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Toshiaki Kakitani
1984 Volume 53 Issue 8 Pages
2857-2858
Published: August 15, 1984
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Iwao Hosokawa
1984 Volume 53 Issue 8 Pages
2859
Published: August 15, 1984
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Takashi Iwashita, Norikiyo Uryû
1984 Volume 53 Issue 8 Pages
2860A
Published: August 15, 1984
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Sumiyoshi Fujiki, Keisei Shutoh, Shigetoshi Katsura
1984 Volume 53 Issue 8 Pages
2860B
Published: August 15, 1984
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