Zinc selenide single crystals were grown by the sublimation method under variously controlled partial pressures of one of the constituent elements using a closed quartz ampule with pure Zn or a Se reservoir at one end.
The relation between the partial pressure of Zn or Se
2, which was estlimated from the reservoir temperature, and the transport rate of solid ZnSe from the charged source to the growth chamber via the vapor phase was found:
(1) In the case of low partial pressure of Zn or Se
2, i.e. a lower reservoir temperature, the transport rate was independent of partial pressure.
(2) In the case of high Zn partial pressure, it was proportional to the—3rd power of Zn partial pressure.
(3) For the higher Se
2 partial pressure, it was proportional to the—3/2th power of Se
2 partial pressure.
These experimental results were compared with the calculated results which were obtained on the assumption that the rate determining procedure for the transport process was the diffusion in the vapor phase, and regions showing good agreement between the experimental and calculated results were disclosed.
The grown crystals had always a crystal structure of the zinc blend type and their typical shapes were columnar with an equilateral hexagonal cross section grown in the direction of one of [111] directions and also plate-like grown in the directions of two of [111] directions.
X-ray diffraction photographs by the oscillating crystal method and the Weissenberg method revealed two types of twin structures caused by growth faults; one due to the growth fault in only one of [111] directions which corresponded to the growth direction of the columnar crystals and the other due to the growth fault in at least two of [111] directions which corresponded to growth directions of the plate-like crystals.
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