The electrical properties of an intermetallic compound HgTe, such as carrier concentrations
Ne and
Nh, and mobilities μ
e and μ
h of electron and hole, respectively, obtained from the analysis of the Galvano-magnetic effects at 4.2 K were thermodynamically associated with the annealing temperature and the partial pressure of Hg on the
P(pressure)-
T(temperature) phase diagram for the Hg-Te system. The
P-
T-
X(composition) phase diagram of HgTe was drawn from the relative difference |
Ne−
Nh| and the intrinsic boundary was obtained from the minima of the |
Ne−
Nh|. Then, the i-boundary of the present work was compared with those reported previously and examined.
Also, contour maps of the electron mobility μ
e and hole mobility μ
h were drawn on the
P-
T diagram, which was named, so to speak,
P-
T-μ(mobility) phase diagram and gave the condition to obtain a desired mobility. Further, the quantities α=μ
h⁄μ
e(=1⁄
b) and β=
Nh⁄
Ne, defined in the analysis of the Galvano-magnetic effects of HgTe, were calculated and maps of distribution of these quantities were drawn on the
P-
T diagram.
They were named the
P-
T-
b(=1⁄
a) and
P-
T-β phase diagram, as they represented supplementally the meaning of the
P-
T-μ and the
P-
T-
X diagram.
Additionally, the field of appearance or reversal of the negative or positive sign of Hall coefficient was shown on the
P-
T diagram, according to conditions of the temperature and the magnetic field in the measurement of Hall coefficient. This diagram is expected to become a reference or a standard to select the condition of the measurement and to estimate a conductive type etc.
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