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77 巻, 3 号
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新井 龍一, 古川 雄一, 森島 雅人, 葛巻 徹2013 年 77 巻 3 号 p. 59-63
発行日: 2013年
公開日: 2013/03/01
ジャーナル フリーRecently, with increase of demand of flat panel displays, it is required to develop a transparent electroconductive film without using a rare metal. In this study, we carried out the formation of a transparent electroconductive film derived from fullerene. C60 was evaporated on a quartz substrate, and then we irradiate ultraviolet light on the films for 72 or 120 h, respectively. After the irradiation, nickel thin film formed on the C60 film, and then heat-treatment was carried out in an electric furnace with a vacuum of 10−4 Pa. Raman spectra showed that C60 films were polymerized by ultraviolet light irradiation. Although polymerized C60 films tended to become amorphous structure by heat-treatment of 873 K for 10 min, the films covered with nickel as a catalyst tended to be graphitized by the same treatment. The obtained films indicated transparency, and the minimum electrical resistivity was 10−3 Ω cm.
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森田 憲治, 新田 紀子, 谷脇 雅文2013 年 77 巻 3 号 p. 64-69
発行日: 2013年
公開日: 2013/03/01
ジャーナル フリーCharacteristic cellular structure is formed on the ion implanted surface of GaSb, InSb and Ge, by the self-organizational behavior of point defects induced by ion irradiation. In this work, fabrication of the nano-cell structure is performed for Ge. Formation process of the cellular structure in Ge is somewhat different from those in GaSb and InSb. In Ge, the irradiated layer is amorphized prior to the cell formation while its amorphization occurs after the cell formation in GaSb and InSb. Two kinds of nano-cell fabrication were performed and the nano-cell developments in both fabrications were compared. One is initially to form the ordered void lattice and to develop it to the cell lattice. In the other method, initially the surface layer of Ge wafer was amorphized by ordinary ion irradiation and then, nano-cell structure was formed on it by the same process. These processes were performed using 30 keV Ga+ in a focused ion beam apparatus at room temperature. The results showed that secondary void formation was remarkable in the initially amorphized Ge. Probably the high mobility of the vacancy-type defects in amorphous Ge might have accelerated the formation of secondary voids between the initial voids.
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小内 駿英, 長井 悠輝, 斎藤 恭介, 小山 裕2013 年 77 巻 3 号 p. 70-74
発行日: 2013年
公開日: 2013/03/01
ジャーナル フリーGaSe crystal has been expected as one of the promising nonlinear optical crystals for highly efficient Terahertz (THz) wave generation. However there are several reasons why it is difficult to grow the bulk crystals with fewer defects. To overcome the obstacles, temperature difference method under controlled vapor pressure (TDM-CVP) is applied for crystal growth. According to this method, crystals with stoichiometric composition can be grown at the constant growth temperature under the application of controlled Se vapor pressure and lower temperature growth enables the reduction of point defect concentration. In this article, surface morphology is observed by optical microscope. To identify polytypes, backscattered Raman spectra were measured. X-ray diffraction confirmed the polytypes and single crystalline phase. Infrared (λ=1 µm) and Terahertz wave (1~3 THz) transmittance measurements were performed to calculate the absorption coefficient in these wavelength regions. From these results, it is shown that the grown crystals have shown an ε-type single phase and the absorption coefficients of grown crystals have been improved according to the increase of applied Se vapor pressure during crystal growth.
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杉本 典弘, 濱田 大輔, 竹中 康司2013 年 77 巻 3 号 p. 75-79
発行日: 2013年
公開日: 2013/03/01
ジャーナル フリーWe successfully controlled thermal expansion of metal matrix composites (MMCs) containing antiperovskite manganese nitrides with giant negative thermal expansion (NTE). The NTE of the manganese nitrides is greater than −30 ppm/K in α (coefficient of linear thermal expansion), which is several or ten times as large as that of conventional NTE materials. Powder metallurgy using pulsed electric current sintering enables us to reduce temperatures and times for fabrication of MMCs. Consequently, chemical reactions between a metal matrix (Al, Ti, or Cu) and the nitride filler can be controlled and high-melting-point metals can be used as a matrix. Thermal expansion of these MMCs is adjustable across a wide range of α values, even negative ones, with high reproducibility.
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松本 健介, 青山 真大, 竹中 康司, 生田 博志2013 年 77 巻 3 号 p. 80-84
発行日: 2013年
公開日: 2013/03/01
ジャーナル フリーThin films of Mn3CuN were prepared by a reactive sputtering method to evaluate the magnetic anisotropy. A stoichiometric Mn3CuN undergoes a ferromagnetic and a cubic-to-tetragonal structural transition simultaneously at 143 K, and displays large magnetostriction below this temperature. The origin of magnetostriction is believed to be ferromagnetic shape-memory effect, a phenomenon still not well understood as there are not many compounds known to belong to this class of materials. The magnetic anisotropy is one of the most important parameters for understanding ferromagnetic shape-memory effect. A (111) oriented thin film was obtained on an yttria-stabilized zirconia (YSZ) substrate with a TC similar to bulk samples. On the other hand, (100) oriented thin films were obtained on MgO substrates, although TC was higher than bulk samples, which may be attributed to nitrogen deficiency. Magnetic hysteresis measurements revealed a rather large magnetic anisotropy despite the small crystallographic anisotropy. This confirms that the magnetic shear stress is large, as expected for a ferromagnetic shape-memory material.
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吉田 昌弘, 小野寺 学史, 手束 展規, 杉本 諭, 斉藤 好昭2013 年 77 巻 3 号 p. 85-88
発行日: 2013年
公開日: 2013/03/01
ジャーナル フリーWe investigated the crystal structure and spin conduction property of Co2FeAl0.5Si0.5 (CFAS) full-Heusler alloy thin films deposited on Si substrate. The multilayer films with different barrier layer were deposited by RF magnetron sputtering system to compare their spin conduction properties. Spin injection signals were observed only with Si sub.//Mg/MgO/CFAS structure. It is considered that the crystal structure near the interface changed by insertion of Mg layer affected the spin conduction property.
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小野寺 学史, 吉田 昌弘, 手束 展規, 杉本 諭, 斉藤 好昭2013 年 77 巻 3 号 p. 89-93
発行日: 2013年
公開日: 2013/03/01
ジャーナル フリーWe investigated the structural property of MgO thin films on Si(001) substrates by molecular beam epitaxy in order to obtain (001)-oriented MgO barrier for high spin polarization on Si substrate. The MgO layer deposited at 200℃ and deposition rate of 0.30 nm/min grew with (001)-orientation on Si(001) substrate. The (001)-orientation and crystallization of the MgO layer were enhanced by insertion of Mg layer into interface between Si substrate and MgO layer. It is considered that the Mg layer prevented oxidation of Si at interface and functioned as buffer layer.
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山本 尚嗣, 廖 金孫, 村上 孝浩, 中田 一博2013 年 77 巻 3 号 p. 94-100
発行日: 2013年
公開日: 2013/03/01
ジャーナル フリーTi-6Al-4V alloy plates with thickness of 5 and 12 mm were respectively welded using hybrid welding process of 10 kW class fiber laser and pulsed metal inert gas (MIG) arc, and their hybrid weldability was investigated in the present study. For the plate with thickness of 5 mm, sound welded joints can be acquired by single-pass welding, and the joint strength is the same as that of base metal. For the plate with thickness of 12 mm, welded joints with good bead appearance can be obtained by single pass welding from both sides, and the joint strength is almost the same as that of base metal. The hardness of both weld metal and heat affected zone of these welded joints is higher than that of base metal because of the formation of martensite.
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加藤 慎也, 大坪 啓視, 植木 智之, 岡田 達也2013 年 77 巻 3 号 p. 101-106
発行日: 2013年
公開日: 2013/03/01
ジャーナル フリーThe objective of the present study was to find the orientation relationship between a recrystallized grain at its initial stage and a deformation microstructure in a non-uniformly deformed copper single crystal.
A tensile strain of 25% was applied to a 〈110〉 copper single crystal sample in which shallow grooves were made at both side faces before the tensile test to promote non-uniform deformation. A thin disc specimen prepared from the deformed sample was annealed in a high vacuum. A scanning electron microscope (SEM)/electron backscatter diffraction (EBSD) method was used to analyze the orientations of deformed and annealed states.
There are two primary slip planes of the largest Schmid factor in a face-centered-cubic metal single crystal deformed along a 〈110〉 direction. In the present copper single crystal sample, both right-up and right-down band-like regions are formed in which either of the primary slips was activated. The arrangement of band-like regions on the overall sample surface was almost symmetrical. Between band-like regions, there were regions of patchy slip appearance, consisting of double-slip and single-slip areas. The band-like regions were rotated so that the slip directions moved towards the tensile axis. On the other hand, the rotation of patchy regions was relatively small.
In the disc specimen annealed at 833 K, a recrystallized region was formed at the boundary between band-like and patchy regions. The recrystallized region consisted of two types of recrystallized grains having a twin relationship each other. Both types of recrystallized grains had an 〈111〉-rotated orientation relationship with the band-like region.
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鹿島 和幸, 菅江 清信, 上村 隆之, 幸 英昭, 工藤 赳夫2013 年 77 巻 3 号 p. 107-113
発行日: 2013年
公開日: 2013/03/01
ジャーナル フリーThe role of chromium contents on atmospheric corrosion of steel in the environment containing chloride ion was studied by exposure test and electrochemical experiments. It was found that corrosion resistance of 1% chromium steel was lower than that of the steel without chromium in the environment whose concentration of chloride ion was very high by the exposure test. On the other hand, containing chromium increases corrosion resistance in the environment with low chloride concentration. In neutral chloride solution corrosion rate of 1% chromium steel was lower than that of the steel without chromium, but was high in low pH chloride solution. The pH dependence of corrosion resistance of 1% chromium steel corresponded with the corrosion resistance by the exposure test.
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