A UO
2 single crystal 10mm in diameter and 30mm long was prepared by means of the floating zone technique. In an atmosphere of 5 atm. nitrogen. a sintered UO
2 rod, 17mm in diameter and 150mm long of 97% theoretical density, was heated by high frequency induction in a graphite pipe. The electronic conductivity of UO
2 increased with rising temperature. When the surface temperature of the pipe attained 1, 100°C, the pipe was removed and the rod was heated directly by induction. The UO
2 rod was heated at a rate of 500°C/hr, until the surface temperature became 1, 850°C (power supply 18kw). At this temperature, about 70% of the cross section of rhe rod been melted, and the nonmelted outer portion acted as crucible. Then the rod was rotated at a speed of 100r.p.m. and at the same time raised at a speed of 5mm/hr. After it reached a predetermined height, the rod was again lowered at the same speed to its original position. This double pass generated a single crystal in the central portion. Back reflection Laue photographs taken from different points of the specimen showed that the <111> direction was inclined at about 10° to the axis of the rod. No etch pits were found in the single crystal area. The result of spectroscopic analysis revealed that certain kinds of impurities were concentrated in the lower part.
抄録全体を表示