巻号一覧
33 巻, 3 号
選択された号の論文の6件中1～6を表示しています
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渡辺 正1982 年 33 巻 3 号 p. 96-103
発行日: 1982/03/01
公開日: 2009/10/30
ジャーナル フリーPDF形式でダウンロード (995K) -
景山 明彦, 秋野 卓也1982 年 33 巻 3 号 p. 104-108
発行日: 1982/03/01
公開日: 2009/10/30
ジャーナル フリーFor the determination of hydrogen of the base steel electroplated with zinc, methods to remove the zinc deposit were studied. The hydrogen content in the base steel was determined using a vacuum hot extraction method at 900°C. The amalgamation method is the most suitable to remove the zinc deposit. The zinc electroplated sample should be allowed to stand for about 24 hours and then be amalgamated. However, after the amalgamation the hydrogen content determination must be made as soon as possible, because the content in the base steel tends to be reduced with the leaving time. The hydrogen content of the base steel as received is known to be 0.15μg/g, while the content of the zinc-plated one was determined to be around 1μg/g. In the case of the zinc-plating from the cyanide bath, it was known that (1) entry of hydrogen into the base steel occured in the early stage of the plating, (2) the bath temperature did not affect the hydrogen content, and (3) the content increased with increasing cathodic current density and concentration of sodium hydroxide or of sodium cyanide in the bath. Among various types of the zinc-plating bath, the hydrogen content of the base steel plated with zinc was high for the zincate or amine bath and low for the sulfate bath.抄録全体を表示PDF形式でダウンロード (685K) -
江口 晴一郎, 横井 昌幸, 山崎 清1982 年 33 巻 3 号 p. 109-113
発行日: 1982/03/01
公開日: 2009/10/30
ジャーナル フリーDistribution of chromium complexes in various chromium baths (pH 2-4) was examined by zone electrophoresis in the viewpoint of their charges and studied in relation to bright chromium plating. To obtain bright chromium deposits, charge number q (per one chromium atom) of cationic chromium (III) complexes is affected by the presence of Cr2O72- and [Cr (III) complex] 1-. In the presence of Cr2O72-, 0<q≤1 is necessary. In the presence of both Cr2O7 2- and [Cr (III) complex]1-, q is allowed to cover a wide range, whereas in the absence of both anions, 0<q<1 is necessary. The charge number q generally decreases as the increase of pH and (NH4)2SO4 concentration of the bath. The reason why chromium deposition can occur in both Cr2O72--NH4+ and [Cr(C2O4)3]3--NH4+ baths is deduced to the formation of cationic polynuclear ammine complex with a low charge number in the cathode film.抄録全体を表示PDF形式でダウンロード (711K) -
西川 治良, 南 晋一1982 年 33 巻 3 号 p. 114-118
発行日: 1982/03/01
公開日: 2009/10/30
ジャーナル フリーElectroless indium plating with NaBH4 as a reducing agent has been studied by measuring deposition rates, infrared spectra, thermal analysis curves and cathodic polarization curves. It was found that a metallic grey deposit can be obtained with EDTA as a complexing agent in the pH range of 9.5-10.0. The addition of tri-ethanolamine to the EDTA plating bath was effective in increasing the deposition rate. IR, TG, DTG and DTA data suggested that EDTA complexes indium ions strongly in the bath solution and TEA participates in the stabilization of the complex. The cathodic polarization curves of Pt electrode showed hydrogen evolution peak. The peak height decreases with increasing pH, [In2(SO4)3]/[CEDTA] ratio and In2(SO4)3 concentration, corresponding to decreases in the deposition rate observed for the electroless plating. The deposited film grew up to 0.1μm thickness during one processing and X-ray diffraction indicated the presence of Cu4In.抄録全体を表示PDF形式でダウンロード (591K) -
福富 勝夫, 北島 正弘, 岡田 雅年, 渡辺 亮治1982 年 33 巻 3 号 p. 119-125
発行日: 1982/03/01
公開日: 2009/10/30
ジャーナル フリーAs application of SiC-coated molybdenum to the first wall components of a fusion reactor has begun to attract much attention from the view point of plasma contamination. Silicon carbide films up to 12μm in thickness was synthesized for this purpose by RF glow discharge of the mixture of Si vapor and C2H2 gas. The deposits were characterized by X-ray diffraction, electron microprobe analysis, Auger electron spectroscopy and IR absorption spectroscopy. Control of Si/C ratio of the deposits was readily achieved only by changing the substrate temperature, holding the other coating process variables constant. Nearly stoichiometric SiC was found to be formed at the deposition temperature of 800°C, when silicon was evaporated at a rate of about 0.04g min-1 under an acetylene gas pressure of about 5×10-3 Torr. Preliminary examination on thermal stability of the deposits showed that a mixture of C+SiC was desirable rather than stoichiometric compound only. The inclusion of free silicon in the film seemed to be responsible for the degradation of nearly stoichiometric film above 1300°C. The synthesis mechanism of SiC films in the RF reactive ion platig was also discussed mainly by the ductility change and fractography of the molybdenum substrate coated under various coating conditions.抄録全体を表示PDF形式でダウンロード (2664K) -
吉村 長蔵, 宮本 清茂1982 年 33 巻 3 号 p. 126-128
発行日: 1982/03/01
公開日: 2009/10/30
ジャーナル フリーPDF形式でダウンロード (318K)
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