金属表面技術
Online ISSN : 1884-3395
Print ISSN : 0026-0614
ISSN-L : 0026-0614
38 巻, 4 号
選択された号の論文の6件中1~6を表示しています
  • 高木 清
    1987 年 38 巻 4 号 p. 124-132
    発行日: 1987/04/01
    公開日: 2009/10/30
    ジャーナル フリー
  • 野口 駿雄, 吉村 長蔵
    1987 年 38 巻 4 号 p. 133-137
    発行日: 1987/04/01
    公開日: 2009/10/30
    ジャーナル フリー
    It has been reported that the formation of uniform anodic oxidation coatings on aluminum in baths of mono-carboxylic acids (formic, acetic, propionic, butyric, valeric and benzoic acids) was difficult, and local corrosion on the surface was always observed.
    In the present paper, the anodization of aluminum in mono -carboxylic acids (formic, acetic, propionic, butyric and lactic acids) was investigated by the constant voltage method (50V, formic acid bath: 15V).
    Uniform anodic oxidation coatings was prepared in the above baths, and SEM observation of film surfaces and cross-sections revealed that the films had larger size pores (600-700Å) and cells than films formed in a sulfuric acid bath. It was observed that cells of the films dissolved in mono -carboxylic acids and fluoride ion were annexed in the upper parts of film.
    In terms of dyeing affinity, the films were superior to films of the same thickness prepared in a sulfuric acid bath.
  • II.複合酸化物皮膜の生成機構
    高橋 英明, 梅原 康敏, 永山 政一
    1987 年 38 巻 4 号 p. 138-142
    発行日: 1987/04/01
    公開日: 2009/10/30
    ジャーナル フリー
    On the basis of results obtained in a previous investigation, the growth mechanism of composite oxide films formed when anodizing Al covered with hydroxide was discussed by checking the behavior of ion transport, void formation, and current efficiency for oxide formation.
    The mechanism that can be supported is as follows: during anodizing hydroxides are dehydrated to form dense crystalline oxides at the hydroxide/oxide interface, and the voids produced at the interface by shrinkage are repaired with new oxide produced by the outward transport of Al3+ across the oxide layer. At the same time, an amorphous oxide is formed at the oxide/metal interface, by the inward transport of O2-ions. The amorphous oxide is then transformed to the crystalline oxide with the formatin of voids at the amorphous oxide/crystalline oxide interface at a rate increasing with increasing temperature. The voids thus formed are not filled up with Al2O3. The transport number of Al3+ions was estimated to be 0.32 and the current efficiency for oxide formation was 1.21. The volume fraction of the voids produced by the transformation of amorphous oxide to crystalline oxide was calculated to be 0.02-0.08, the value of which increases with increasing anodizing temperature.
    An alternative mechanism was also considered, in which the transformation of hydroxide to crystalline oxide does not cause any void formation because of rapid rearrangement of atoms, but it seems to be less probable than the first.
  • 興戸 正純, 市野 良一, 沖 猛雄
    1987 年 38 巻 4 号 p. 143-148
    発行日: 1987/04/01
    公開日: 2009/10/30
    ジャーナル フリー
    The impedance response, and the capacitance at 1kHz were measured on electrodes of copper, aluminum and steel in various neutral solutions, using an FFT analyzer and a LCR meter respectively. The series capacity Cs was represented in an electrode-solution system consisting of charge transfer resistance Rct, double layer capacitance Cdl and solution resistance Rsol as Cs=Cdl (1+1/D2) where D=ωCdlRct. The measured value of Cs was equal to the Cdl at D→∞ in systems combining a metal and a solution. The capacitance Cs of copper was in proportion to the surface area in 0.5mol/L Na2SO4 with 0.3g/L benzotriazole and 0.3g/L nicotinic acid. It was found that the surface area could be estimated by the Cs value measured at 1kHz in solutions where the distribution of Cdl was uniform on the metal surface.
  • 佐藤 登, 南 達郎
    1987 年 38 巻 4 号 p. 149-153
    発行日: 1987/04/01
    公開日: 2009/10/30
    ジャーナル フリー
    Hopeite and Phosphophyllite as zinc phosphate crystals were formed on galvannealed steel (GA) with alloy phase of FeZn7 and cold rolled steel (CR). The distribution of crystal components were analysed by Auger electron spectroscopy for the surface region and depth profile.
    No Mn or Ni was detected on the Hopeite crystal surface and it was therefore concluded that the crystal surface was made up of Zn3(PO4)2⋅4H2O. Mn was, however detected on the Phosphophyllite crystal surface. These results correlated with those from X-ray photoelectron spectroscopy described in a previous paper.
    In the depth profile analysis, Ar+sputtering was applied between 0-64.5min, and the intensity ratios were calculated for O/P, Zn/P, Fe/P, Mn/P and Ni/P from the Auger spectra and were plotted. For both Hopeite and Phosphophyllite crystal, the O/P ratio was constant in the bulk of the crystal layer, indicating that the structure of-PO4 was maintained uniformely. The ratios of Mn/P and Ni/P were also constant in the bulk of crystal layer.
    The ratios for Zn/P and Fe/P of the crystal on GA steel and for Fe/P of the crystal on CR steel, however, showed a radical increase in accordance with the sputtering time. It was thought that this phenomenon was in response to the steel itself through the porosity of zinc phosphate crystal.
  • (その2) 横方向へのピット成長とピット分布
    井手 本康, 小浦 延幸
    1987 年 38 巻 4 号 p. 154-159
    発行日: 1987/04/01
    公開日: 2009/10/30
    ジャーナル フリー
    Studies were conducted on predicting by computer simulation the morphology of etch pits formed under various conditions.
    A local dissolution model was applied to pit growth in the direction of pit diameter, in which it was assumed that Al dissolution occurs across the passive film, and that the rate is a function of a potential difference in the pit. The computer simulation showed that pit radius decreases with increases in temperature and current density.
    The distribution of pit diameter obtained by the computer simulation was compared with statistical treatment of experimental results. It was found that the distribution of pit diameter can be calculated from the average of pit diameter.
    An aluminum specimen was electrolytically etched in 0.85M HCl solution, and the results showed good agreement with the values obtained by simulation.
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