Film characteristics-film composition, orientation, resistance, etc.-depend on the reaction condition of the reactive ion plating of TiC using CH
4 and C
2H
2 gases as reactants with partially ionized Ti vapor. TiC film plated on steel substrate had a high Hv hardness of 3200Hv at C
2H
2 gas partial pressure of 0.13Pa, bias voltage of 1kV, ionization current of 700mA, and a distance between ion source and substrate of 8cm. The temperature of the substrate influenced the hardness and phase of the TiC in the film produced by ion plating using CH
4 gas as a reactant. The phase of the TiC of the plated film using CH
4 gas on the substrate increased at higher temperatures and temperatures higher than 500°C were more effective in obtaining hard TiC films.
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