Film characteristics-film composition, orientation, resistance, etc.-depend on the reaction condition of the reactive ion plating of TiC using CH4
gases as reactants with partially ionized Ti vapor. TiC film plated on steel substrate had a high Hv hardness of 3200Hv at C2
gas partial pressure of 0.13Pa, bias voltage of 1kV, ionization current of 700mA, and a distance between ion source and substrate of 8cm. The temperature of the substrate influenced the hardness and phase of the TiC in the film produced by ion plating using CH4
gas as a reactant. The phase of the TiC of the plated film using CH4
gas on the substrate increased at higher temperatures and temperatures higher than 500°C were more effective in obtaining hard TiC films.