真空
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
13 巻, 11 号
選択された号の論文の3件中1~3を表示しています
  • 栗山 良員
    1970 年13 巻11 号 p. 354-362
    発行日: 1970/11/20
    公開日: 2010/01/28
    ジャーナル フリー
  • 村上 義夫
    1970 年13 巻11 号 p. 363-370
    発行日: 1970/11/20
    公開日: 2009/09/29
    ジャーナル フリー
    In order to prevent the deposition of evaporating materials onto the inner wall of deposition chambers, covering of the wall with plastic films has been proposed. In this case, the following conditions must be met for the plastic films : (i) Dissolved gases in the films can be easily removed, (ii) outgassing due to thermal decomposition is considerably low at below 300°C, and (iii) the sticking coefficients of vapors (evaporating materials) on the films must be unity.
    Evaluation of two groups of heat-resisting films indicates that polyimide films almost fulfill the above requirements, except that they take more time to be evacuated than Teflon films. The outgassing rates due to thermal decomposition of polyimide films are lower than 10-9 Torr·1/cm2·sec at below 260°C, which lie between a tenth and a twentieth of those of Teflon films. The sticking coefficients of nickel and gold on polyimide films are close to unity from the onset of deposition, while those on Teflon films are extremely low, differing from those on other films.
  • 岡田 勝蔵, 初鹿 敏明, 富田 宏, 本尾 哲, 高橋 昇
    1970 年13 巻11 号 p. 371-376
    発行日: 1970/11/20
    公開日: 2010/01/28
    ジャーナル フリー
    The initial oxidation of the (110), (111) and (100) copper surfaces, by changing the oxygen pressure and temperature, has been studied by low energy electron diffraction (LEED) techniques. The interactions of oxygen with copper showed different behaviors on each surface. The Cu (100) (2 × 3) -O and Cu (100) C (4 ×4) -O surface structures, which had not been observed, were obtained by heating in the low oxygen pressure range.
    Cu2O was formed on the (111) and (100) surfaces respectively and not observed on the (110) surface in the LEED pattern. The crystallographic relationships between Cu2O and the substrate are as follows ;
    (111) Cu2O // (111) Cu [110] Cu2O // [110] Cu
    (111) Cu2O // (100) Cu [110] Cu2O // [110] Cu
    (100) Cu2O // (100) Cu [110] Cu2O // [110] Cu
    The Cu (111) (2×2) R 30°-0 surface structure was observed on the Cu (111) surface. It may be considered that this structure appears in the transition process of the adsorption structure to Cu2O.
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