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27 巻, 8 号
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渡辺 文夫1984 年 27 巻 8 号 p. 631-647
発行日: 1984/08/20
公開日: 2009/09/29
ジャーナル フリーPDF形式でダウンロード (2842K) -
松下 辰彦, 鈴木 晶雄, 奥田 昌宏1984 年 27 巻 8 号 p. 648-657
発行日: 1984/08/20
公開日: 2009/09/29
ジャーナル フリーReversible structural change has been studied in a thin film system of parylene/GaxSe1-x/parylene structure in order to find a range of conditions for the crystallization, a crytical initialization for as-deposited film to become erasable optical memories. The influence of the illumination by a xenon lamp (photocrystallization) and the heat treatment (thermal crystallization) were analyzed mainly for the composition x = 0.05, using X-ray diffraction and XMA. Finely crystallized area with retaining an adequate surface smoothness, assigned as A-region, developed radially to form a circular crystals when treated at 210°C for 3 min. under the simultaneous illumination of 100 mW/cm2. Lower temperatures and more intense illumination levels were not suitable because of the formation of coarse grains with sharp grain boundaries, B-region. Repeated write/erase was possible for the sandwich structure, using a focused (2μφ) He-Ne laser with power levels of 3.75 mW for 2 ms for vitrification (transparent) and of 2.1 mW for 8000 ms for crystallization (absorbing), respectively. The A-region was found to be connected by scratching GaxSe1-x film with a sharp needle followed by a treatment for the A-type crystallization, which possibly enables us to provide a recording track on the surface, with better S/N ratios. The local stress caused by the scratch may be responsible for the nucleation of connected A-type crystals. It was also found that the film composition changed to become Se-rich on the scratch and deficient on both sides of the scratch.抄録全体を表示PDF形式でダウンロード (3166K) -
安達 洋, 藤井 清, 財満 鎮明, 柴田 幸男, 大谷 茂樹1984 年 27 巻 8 号 p. 658-666
発行日: 1984/08/20
公開日: 2009/09/29
ジャーナル フリーField electron emission from TiC single crystals of <100> and <111> directions was examined. Very stable electron emission was observed when the crystals were flashed at a certain temperature. The current fluctuations due to the residual gas were also reduced. The flashing temperatures make changes in the emission patterns, which render the shapes of the top of the field emission tip. It is concluded that the surface near the top is constracted by (100) and (111) facets independently of the crystal orientations, and this conclusion is confirmed by the Fowler-Nordheim plot of the emission current.抄録全体を表示PDF形式でダウンロード (1156K) -
内田 直人, 円福 敬二, 吉田 啓二, 入江 冨土男1984 年 27 巻 8 号 p. 667-677
発行日: 1984/08/20
公開日: 2009/09/29
ジャーナル フリーMagnetic-flux trapping in Pb-alloy thin films is studied experimentally. In order to clarify pinning characteristics of thin films, which dominate flux trapping, trapped flux in Pb-alloy thin films is measured in-situ from the increment of the quasiparticle current of the Josephson junction made of these Pb-alloy thin films. Experimental results are discussed with the critical state model based on the pinning theory of superconductors. From the material dependence of flux trapping, it is shown that the addition of Au to Pb increases flux trapping due to the occurence of strong pinning centers of normal precipitates of AuPb2 and AuPb3 etc. It is also shown that the addition of Bi decreases flux trapping due to the large value of the London penetration depth of PbBi films. From the temperature dependence of flux trapping, it is shown that the amount of the trapped flux is reduced by raising the temperature of thin films. Finally, the effect of the trapped flux in junction electrodes on the suppression of the critical current of the junction is discussed quantitatively.抄録全体を表示PDF形式でダウンロード (1566K)
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