In order to clarify the difference in the properties of TiN films coated by the HCD and EB+RF methods, TiN ceramic coating on stainless steel sheets and measurement of the ionization rate of Ti atoms using these two kinds of PVD methods were performed in the same ion plating apparatus.
Electron microscopic observations of the TiN films coated by the HCD method showed a fine, smooth gold surface, whereas those by the EB+RF method showed a rougher brown surface. X-ray diffraction pattern on the thin film coated by the HCD method showed a strong (111) peak of TiN, while that of the thin film coated by the EB+RF method showed peaks representing various orientations. The ionization rate of Ti atoms on the substrate surface of the thin film coated by the HCD method was 43%, whereas that by the EB+RF method was 6%. EPMA of TiN films after the HCD and EB+RF methods showed Ti/N of nearly 1; however, EB+RF method contained about 2 atomic% O in TiN film.
It is considered that, due to greater ionization in the HCD method than in EB+RF, the TiN ceramic coating could be accomplished under higher plasma density, making it possible to obtain a fine, smooth TiN film.
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