Low-energy oxygen ions in the energy range of 60-160 eV were extracted from a single-grid Kaufman-type ion source. A small Al disk was placed in front of a cathode filament of the ion source to suppress metal contamination from filament oxide. Ions were irradiated on
n-type Si (100) substrates to form ultrathin Si oxide films of less than 10-nm thickness. Al electrodes were deposited on the insulator films to fabricate M-I-S (metal-insulator-semiconductor) tunnel diode structures, and electrical properties of the diodes, such as I-V characteristics, tunnel resistance and thermal coefficient of diode current, were measured. These results were discussed in relation to the ion beam oxidation conditions, and the applicability of the films to tunnel devices was also studied.
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