Adsorption of C
60 and C
84 on the Si (111) 7×7 and the Si (100) 2×1 surfaces has been studied in detail using field ion-scanning tunneling microscopy/spectroscopy (FI-STM/STS). C
60 is stable on the Si (111) and Si (100) surfaces without rotation at room temperature because of the strong bonding with Si dangling bonds. As a result, the intramolecular structures of C
60, reflected by the local charge density of states, were observed by STM. On the Si (100) surface, C
60 shows Stranski-Krastanov-mode island growth. The first and the second layers from partial c (4×4) and c (4×3) configurations, but fcc (111) single-crystal growth apperars from the third layer. By depositing C
84 on the Si (100) surface at about 100°C, we succeeded in growing C
84 single crystal for the first time, and determined its crystal structure to be the fcc type by STM observation. By comparing the C
60 intramolecular structures with the calculated band structure (Kawazoe's group, Tohoku Univ.), the adsorption orientations of the C
60 were determined.
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