巻号一覧
49 巻, 9 号
選択された号の論文の13件中1～13を表示しています
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小特集「化学気相成長プロセスのシミュレーション」
解説
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土井 謙太郎, 阪本 俊夫, 毎田 憲亮, 立花 明知2006 年 49 巻 9 号 p. 514-519
発行日: 2006年
公開日: 2007/06/15
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大川 和宏, 平子 晃, 徳田 耕太2006 年 49 巻 9 号 p. 520-524
発行日: 2006年
公開日: 2007/06/15
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羽深 等2006 年 49 巻 9 号 p. 525-529
発行日: 2006年
公開日: 2007/06/15
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末光 眞希2006 年 49 巻 9 号 p. 530-534
発行日: 2006年
公開日: 2007/06/15
ジャーナル フリーSurface chemistry and growth modeling on epitaxy of Si-related thin films using hydride source gases are described. In particular, impacts of surface hydrogen on the kinetics of adsorption of source-gas molecules and of the hydrogen desorption on the growth kinetics are discussed in detail. This knowledge is used to construct a growth model that successfully accounts for the experimental growth rate and the hydrogen coverage in their temperature and pressure dependences. Impurity atoms added to the Si epitaxy affect both the adsorption and desorption kinetics, but their overall behaviors are given a unified understanding in terms of their bonding energies with the hydrogen atom.
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秋山 泰伸2006 年 49 巻 9 号 p. 535-540
発行日: 2006年
公開日: 2007/06/15
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製品紹介
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フルーエント・アジアパシフィック株式会社2006 年 49 巻 9 号 p. 541-543
発行日: 2006年
公開日: 2007/06/15
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株式会社ウェーブフロント2006 年 49 巻 9 号 p. 544-546
発行日: 2006年
公開日: 2007/06/15
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一般論文
解説
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山崎 登志成, 吉澤 寿夫2006 年 49 巻 9 号 p. 547-551
発行日: 2006年
公開日: 2007/06/15
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研究
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楠本 淑郎2006 年 49 巻 9 号 p. 552-556
発行日: 2006年
公開日: 2007/06/15
ジャーナル フリーMathematical consideration is given to the symmetry of free molecular flows through the pipe of an arbitrary shape. In the previous paper (I), it was shown that the diffuse reflection based on a stochastic model conserves the symmetry if and only if it obeys cosine law. To explore whether a specular reflection conserves the symmetry, a new framework including both the stochastic and deterministic models was developed. Using this unified framework it immediately follows that the specular reflection conserves the symmetry, even when arbitrarily mixed with the cosine law reflection. In contrast with the stochastic model, the deterministic model allows innumerable symmetry-preserving reflection rules.
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金本 悠平, 坂本 元, 加藤 勇2006 年 49 巻 9 号 p. 557-561
発行日: 2006年
公開日: 2007/06/15
ジャーナル フリーHydrogenated amorphous silicon (a-Si:H) nanoball films which include Si nanocrystals, are fabricated by the double-tubed coaxial-line-type microwave plasma chemical vapor deposition (DTCL-MPCVD) system. Photoluminescence (PL) is observed at room temperature after the a-Si:H nanoball films are oxidized at high temperature in air and/or pure oxygen atmosphere. In this study, the HF treatment is performed to a-Si:H nanoball. By the HF treatment, the photoluminescence wavelength has shifted from about 740 nm to 590 nm. We have measured the diameter of Si nanocrystal using the X-Ray Diffraction (XRD) and the Transmission Electron Microscope (TEM). It is found that the diameter of the Si nanocrystal decreases from about 5.0 nm to 3.0 nm, by the HF treatment. After changing the conditions of oxidation, PL peak wavelengths are shifted from about 740 nm to 500 nm. We have determined the diameter of Si nanocrystal contained in the a-Si:H nanoball using XRD and TEM. Consequently, it is found that the diameter of Si nanocrystal becomes small from about 5.1 nm to 3.4 nm.
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速報
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安倉 秀明, 高瀬 康則, 中村 篤宏, 東村 佳則, 鈴木 晶雄, 青木 孝憲, 松下 辰彦, 奥田 昌宏2006 年 49 巻 9 号 p. 562-565
発行日: 2006年
公開日: 2007/06/15
ジャーナル フリー50∼465-nm-thick Al-doped zinc oxide (AZO: 1.5 wt.%Al2O3) films have been prepared on glass substrates at low temperature by pulsed laser deposition (PLD) using ArF excimer laser and Nd:YAG laser. During the deposition process, oxygen with partial pressure of 0-1.6 Pa was introduced in the chamber. As a result, with oxygen partial pressure of 0.5 Pa, an excellent optical transmittance in the visible wavelength range was obtained for 50 to 465-nm-thick AZO films and the lowest resistivity of 3.16×10−4 Ω•cm was obtained for approximately 405-nm-thick AZO film. FE-SEM and AFM observations revealed that for 50-nm-thick AZO film, some fine particles like the crystal-embryo were recognized on the surfaces. With increased film thickness, the value of surface roughness increased because of large grain size.
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奥野 公夫, 古本 隆志2006 年 49 巻 9 号 p. 566-569
発行日: 2006年
公開日: 2007/06/15
ジャーナル フリーThe interaction between hydrogen-diluted methane plasma gas and the substrate metal has been investigated to evaluate diamond nucleation growth and initial film growth by combining chemical-vapor deposition and field-ion microscopy (CVD-FIM). After the plasma gas was exposed to a tungsten tip (W tip) at a methane contents of CH4/H2=1.5%, which is generally used in diamond film growth by CVD, the interaction effect was evaluated from field-ion images and the variation of field enhancement factor β cm−1 in Fowler-Nordheim plots, which is a result of the interaction with the plasma gas. The plasma-W tip surface interactions are very strong, and mixed thick layers are formed on the top surface of the W tip. The growth of carbon clusters consisting of several carbon atoms is also observed. However, it is still unclear whether carbon clusters are the prenucleation states of diamond growth or amorphous states.
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会議報告
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末次 祐介2006 年 49 巻 9 号 p. 570-572
発行日: 2006年
公開日: 2007/06/15
ジャーナル フリーPDF形式でダウンロード (506K)
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