巻号一覧
42 巻, 6 号
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和久 芳春1999 年 42 巻 6 号 p. 595-602
発行日: 1999/06/20
公開日: 2009/10/20
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大泊 巌, 嶋田 一義, 石丸 哲也1999 年 42 巻 6 号 p. 603-607
発行日: 1999/06/20
公開日: 2009/10/20
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電子間クーロン相互作用の効果を中心として中西 寛, 笠井 秀明, 興地 斐男1999 年 42 巻 6 号 p. 608-612
発行日: 1999/06/20
公開日: 2009/10/20
ジャーナル フリーPDF形式でダウンロード (654K) -
柏葉 安兵衛, 坂本 司, 切田 仁, 畠山 寧, 岩崎 俊一, 阿部 英志, 池田 俊夫, 大竹 勉1999 年 42 巻 6 号 p. 613-619
発行日: 1999/06/20
公開日: 2009/10/20
ジャーナル フリーThin-film photovoltaic cells composed of Cu-doped CdS and non-doped CdS layers (SnO2/CdS (Cu) /CdS/A1) have been fabricated by an all vacuum deposition process. First, thin Cu film (about 10 nm thick) was deposited on the SnO2 coated glass substrate followed by the deposition of CdSI layer (about 500 nm thick). These layers were annealed in a vacuum at 350°C for 15 min. before the deposition of CdSII layer (about 4 pm thick). The substrate temperature was lowered from 200°C to 130°C and held at 130°C during deposition of CdSII layer. This process was most important to get efficient cells. Finally, Al film was deposited on the CdSII layer as a counter electrode. The conversion efficiency of the best cell was over 7%. Depth profiles measured by SIMS showed that the Cu diffused into CdSII layer through CdSI layer and the diffusion of Cu slowed down drastically at a substrate temperature of about 140°C and stopped at about 130°C. As a result, the boundary between the Cu-doped p-type CdS layer and non-doped CdS layer was formed in the CdSII layer. The spectral responses of the short-circuit current of the cells were mainly dominated by the band gap energy and Cu impurity levels in CdS. Therefore, we concluded that the photovoltaic effect of the cells was caused by the p-i-n or p-n homojunction of CdS.抄録全体を表示PDF形式でダウンロード (1123K) -
赤石 憲也1999 年 42 巻 6 号 p. 620-627
発行日: 1999/06/20
公開日: 2009/10/20
ジャーナル フリーIn order to consider the outgassing behavior in the pump-down of a vacuum system of a reversibly adsorbed phase, modeling of the pump-down based on the Temkin isotherm was attempted. In the modeling, two variables of relative surface coverage θ and gas density n are used, and a set of the conservation of mass equations which predicts changing rates of θ and n with time during pumping down, were derived. By combining the two equations, solutions of θ (t) and n (t) were derived analytically as a function of time. Then, using the solution n (t) , the measured outgassing rate q (t) was expressed as a product of a pumping speed dependent term and a time dependent term. In addition, it was shown that the theoretical outgassing expression can consistently explain the experimental results for the dependence of the outgassing rate on pumping speed, which were observed in the pump down of a 304 stainless steel chamber and a TiN coated 304 stainless chamber after exposure to moist air.抄録全体を表示PDF形式でダウンロード (1159K) -
増崎 宏, 佐藤 貴之, 生方 映徳, 呉 尚謙, 松本 功, 久世 宏明, 竹内 延夫1999 年 42 巻 6 号 p. 628-632
発行日: 1999/06/20
公開日: 2009/10/20
ジャーナル フリーHCl generation by heterogenious reaction between SiHCl3 and adsorbed H2O on a surface of SUS filter is measured by laser diode spectroscopy. H2O concentration on the filter surface is conditioned by heating up the filter, followed by supplying HCl and H2O at the same time. This process prepares nearly mono-molecular H2O adsorption layer on the filter surface. The amount of HCl generated by SiHCl3 flow on the surface with H2O adsorption is 2 orders of magnitude higher than that expected by the reaction; 2SiHCl3 + H2O→+SiHCl2-O-SiHCl2+ 2HCl.
Furthermore, similar HCl generation is found when SiHCl3 is firstly used after cylinder installation with standard purging process. These results strongly suggests that a very small amount of H2O can initiate a chain reaction involving SiHCl3, which may brings about a hazardous by-products on semiconductor processes.抄録全体を表示PDF形式でダウンロード (652K)
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