The sputtering yields of Al and red blood cells of the human have been measured at oblique angles of incident beam for Ar ion irradiation in the energy region from 5 to 15 keV. The yields were determined from the weight loss of the target. The maximum yield was found to be at angle of incidence θ=74° (5keV), where θis the angle measured from the surface normal. At a large θ, the sputtering yield increases more than 1/cosθ, and the curve passes through a maximum between 70° and 88°. Then, according to the negative defocusing effects caused by spacecharge and the consistent theory of sputtering (Kanaya theory), the dependence of the sputtering on the incident angle (θ) and dead angle (α), dependent on incident ion energy, is given by s (θ) =s (0) · cos^1/2-1/n (θ+α) /cosθ, where n is dependent on incident ion energy. The formula is in good agreement with experimental results. Furthermore, ion beam sputtering has been used to remove the surface layer from Red Blood Cells.

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Measurements of the mean velocities u_∞ and the velocity distributions of the molecular beams from a shockheated source have been carried out by a conventional time-of-flight method, and their translational temperatures T^∞_// parallel to the flow direction have been determined. The speed ratios, S^∞_// = (mu_∞/2kT^∞_//) ^1/2, of 6-20 have been obtained in the source temperature range of T₀ =1, 400-10, 800K and its pressure range of P₀=1.3-6.8atm for argon. They have been less than the theoretical terminal speed ratios for a free jet. In the present apparatus with a convergentdivergent conical nozzle, the boundary layer from the nozzle wall limits the expansion and results in a decrease of the speed ratio. Although the flow is strongly affected by the background gas in the far downstream from the nozzle exit, higher speed ratios have been obtained.

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Absorption spectra of evaporated amorphous WO₃ films were measured under various conditions. Slope of the Urbach tail of fundamental absorption edge was found to decrease with increasing temperature of annealing. Decrease of the slope at the annealing temperature of 100°C is caused by the release of water from the films, while the decrease at 300 °C is originated from crystallization. Shift of optical gap was also observed with increase of annealing temperature. These effects are considered to be caused from the change in the disorder of atomic configurations.
Electrolytic coloration procedure induces a near-infrared absorption band. The absorption band produced by H⁺ injection was narrower than that by Li⁺ injection. This kind of difference in absorption spectra is believed to relate with the difference of frequency of atomic vibrations in the color centers. Optical gap was found to shift to higher energies during electrolytic coloration. This shft is brought about by incorporation of H⁺ or Li⁺ ions into WO₃ matrix.

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