The dependence of resistivity on the oxygen flow rate in sputtered ITO films prepared by RF is quite different from that of ones prepared by DC. The minimum resistivity in RF-sputtered films is about half that in DC-sputtered films. The oxygen flow rate for minimum resistivity in RF-sputtered films is much lower than that in DC-sputtered films. However, these oxygen-doping mechanisms are still unclear.
In order to better understand these mechanisms, oxygen partial pressures under ITO sputtering were measured using a quadrupole mass analyzer with a differential pumping system. The data were interpreted using a quantitative analysis method.
The results reveal that 1) the ratio of gas-phase oxygen to all phases of oxygen coming from the ITO target is the same for DC and RF, 2) the total amounts of all phases of oxygen doped into films are the same in the optimum condition for minimum resistivity, 3) the absorption efficiency of oxygen gas is larger for RF-sputtered films and 4) the oxygen concentration in ITO films is one of the basic factors for determining the resistivity, however there should be other factors which determine the difference between the DC- and RF-sputtered films.
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