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Volume 10, Issue 18

Displaying 1-15 of 15 articles from this issue

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[title in Japanese]

Article type: Cover
1986 Volume 10 Issue 18 Pages Cover1-
Published: 1986
Released on J-STAGE: October 06, 2017

DOIhttps://doi.org/10.11485/tvtr.10.18_Cover1

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[title in Japanese]

Article type: Index
1986 Volume 10 Issue 18 Pages Toc1-
Published: 1986
Released on J-STAGE: October 06, 2017

DOIhttps://doi.org/10.11485/tvtr.10.18_Toc1

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[title in Japanese]

Article type: Appendix
1986 Volume 10 Issue 18 Pages 1-
Published: 1986
Released on J-STAGE: October 06, 2017

DOIhttps://doi.org/10.11485/tvtr.10.18_1

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Amorphous SiC Hetero-Emitter Transistor : New Method for Realizing High Speed Bipolar Transistors

Kimihiro SASAKI, Seijiro FURUKAWA

Article type: Article
1986 Volume 10 Issue 18 Pages 3-8
Published: 1986
Released on J-STAGE: October 06, 2017

DOIhttps://doi.org/10.11485/tvtr.10.18_3

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A 2〜18GHz Band Distributed MMIC Amplifier with Single Supply Bias Network

K. Seino, T. Takagi, Y. Ikeda, T. Ishikawa, M. Komaru, F. Takeda

Article type: Article
1986 Volume 10 Issue 18 Pages 9-13
Published: 1986
Released on J-STAGE: October 06, 2017

DOIhttps://doi.org/10.11485/tvtr.10.18_9

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Development of SHFband Low Noise GaAsFET

S. TAKAMASHI, E. HASE, K. SAIDA, K. URYUU, T. SHIMAZAKI, S. KUDOU

Article type: Article
1986 Volume 10 Issue 18 Pages 15-19
Published: 1986
Released on J-STAGE: October 06, 2017

DOIhttps://doi.org/10.11485/tvtr.10.18_15

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NOISE TEMPERATURE REDUCTION BY COOLING ON FET LOW NOISE AMPLIFIER

K. Honma, Y. Itoh, T. Mochizuki, K. Handa, S. Fukuda

Article type: Article
1986 Volume 10 Issue 18 Pages 21-25
Published: 1986
Released on J-STAGE: October 06, 2017

DOIhttps://doi.org/10.11485/tvtr.10.18_21

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20GHz Band Low Noise HEMT Amplifier

M. Iwakuni, T. Mamabe, M. Niori, T. Kasuga, Y. Hirachi, H. Kurihara

Article type: Article
1986 Volume 10 Issue 18 Pages 27-32
Published: 1986
Released on J-STAGE: October 06, 2017

DOIhttps://doi.org/10.11485/tvtr.10.18_27

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High Power and High Efficiency of Ku-band Power GaAs FET

Osamu Shiozaki, Yasushi Kose, Jun-ichi Urabe

Article type: Article
1986 Volume 10 Issue 18 Pages 33-38
Published: 1986
Released on J-STAGE: October 06, 2017

DOIhttps://doi.org/10.11485/tvtr.10.18_33

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150W-Class High Power FET Amplifier for BS Earth Station

Haruhiko Mizuno, Hajime Matsumura, Shinichi Fujiwara

Article type: Article
1986 Volume 10 Issue 18 Pages 39-44
Published: 1986
Released on J-STAGE: October 06, 2017

DOIhttps://doi.org/10.11485/tvtr.10.18_39

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Ku and Ka BAND GaAs FET POWER AMPLIFIER

Toshio NISHIUMI, Shusaku SASAKI, Yasuhiro AKIBA, Shigenobu AIHARA, Sac ...

Article type: Article
1986 Volume 10 Issue 18 Pages 45-50
Published: 1986
Released on J-STAGE: October 06, 2017

DOIhttps://doi.org/10.11485/tvtr.10.18_45

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Consideration of defiection yoke core for high speed scanning about heating and development of ferrite materials

TAKEO MAEDA, TAKEHIKO MORIKAWA

Article type: Article
1986 Volume 10 Issue 18 Pages 51-56
Published: 1986
Released on J-STAGE: October 06, 2017

DOIhttps://doi.org/10.11485/tvtr.10.18_51

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Application of LaB_6 Thin Film to DC Gas Discharge Panel

Yukio Okamoto, Toshiyuki Aida, Shinichi Shinada

Article type: Article
1986 Volume 10 Issue 18 Pages 57-62
Published: 1986
Released on J-STAGE: October 06, 2017

DOIhttps://doi.org/10.11485/tvtr.10.18_57

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Edge Surface Type Thermal Head For Thermal Transfer Printing

Tetsuhiro KORECHIKA, Keizaburo KURAMASU, Kiyoharu YAMASHITA, Takamichi ...

Article type: Article
1986 Volume 10 Issue 18 Pages 63-68
Published: 1986
Released on J-STAGE: October 06, 2017

DOIhttps://doi.org/10.11485/tvtr.10.18_63

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[title in Japanese]

Article type: Cover
1986 Volume 10 Issue 18 Pages Cover2-
Published: 1986
Released on J-STAGE: October 06, 2017

DOIhttps://doi.org/10.11485/tvtr.10.18_Cover2

RESEARCH REPORT / TECHNICAL REPORT FREE ACCESS

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