ITE Technical Report
Online ISSN : 2433-0914
Print ISSN : 0386-4227
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Volume 15, Issue 31
Displaying 1-7 of 7 articles from this issue
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  • [title in Japanese]
    Article type: Cover
    1991 Volume 15 Issue 31 Pages Cover1-
    Published: May 24, 1991
    Released on J-STAGE: October 06, 2017
    DOIhttps://doi.org/10.11485/tvtr.15.31_Cover1
    RESEARCH REPORT / TECHNICAL REPORT FREE ACCESS
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  • [title in Japanese]
    Article type: Index
    1991 Volume 15 Issue 31 Pages Toc1-
    Published: May 24, 1991
    Released on J-STAGE: October 06, 2017
    DOIhttps://doi.org/10.11485/tvtr.15.31_Toc1
    RESEARCH REPORT / TECHNICAL REPORT FREE ACCESS
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  • HDTV Camera Tube With Avalanche Multiplication Target
    Michihisa Yano, Masaru Yamazaki, Tetsurou Kajiura, Hiromitsu Takeuchi, ...
    Article type: Article
    1991 Volume 15 Issue 31 Pages 1-6
    Published: May 24, 1991
    Released on J-STAGE: October 06, 2017
    DOIhttps://doi.org/10.11485/tvtr.15.31_1
    RESEARCH REPORT / TECHNICAL REPORT FREE ACCESS
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    Very highly sensitive HDTV camera tube is newly developed which adopts amorphous Se photoconductive target utilizing avalanche multiplication effect. By combining this target with high performance 1-inch all electrostatic electron optics successfully, very high sensitivity(20times as sensitive as standard Saticon tube) and, at the same time, high resolution(amplitude response at 800 TV lines is 35%) are achieved in new tube. In 20 times sensitive mode. S/N ratio is about 40 dB and the quality of picture satisfies the demands in HDTV use.
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  • 3-dimensional integration of GaAs MESFET and InGaP LED on Si Substrate
    Takashi UEDA, Chouho YAMAGISHI, Sachiko ONOZAWA, Eiji YAMAICHI, Masahi ...
    Article type: Article
    1991 Volume 15 Issue 31 Pages 7-12
    Published: May 24, 1991
    Released on J-STAGE: October 06, 2017
    DOIhttps://doi.org/10.11485/tvtr.15.31_7
    RESEARCH REPORT / TECHNICAL REPORT FREE ACCESS
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    Process technologies were studied for three dimensional integration of compound semiconductors on Si. The device characteristics of GaAs MESFETs and InGaP LEDs on Si were examined for the purpose. Three dimensional structure of an InGaP LED stacked on a GaAs MESFET was fabricated on a Si substrate as an application of a newly developed SOI method to opto-electoronic integration. For further integration, a thermally stable ohmic contact to GaAs was developed. The fabrication of the 5x7 InGaP LED matrix stacked on the driver GaAs MESFETs was also described.
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  • Excitonic polaritons, Fundamentals and Applications
    Toshio KATSUYAMA, Kensuke OGAWA
    Article type: Article
    1991 Volume 15 Issue 31 Pages 13-18
    Published: May 24, 1991
    Released on J-STAGE: October 06, 2017
    DOIhttps://doi.org/10.11485/tvtr.15.31_13
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    Excitonic polaritons are observed in a waveguide with a single GaAs quantum well. Picosecond time-of-flight measurements reveal a drastic decrease in the group velocity of a light pulse transmitted through waveguide. it is also shown that refractive index change associated with polaritons reaches as large as 20 % (normalized value) under the electric field of 40 kV/cm. Such a large refractive index change leads to new opto-electronic devices using polariton interference.
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  • Characteristics and application of micron-Size field emitter array
    Junji Itoh, Seigo Kanemaru
    Article type: Article
    1991 Volume 15 Issue 31 Pages 19-24
    Published: May 24, 1991
    Released on J-STAGE: October 06, 2017
    DOIhttps://doi.org/10.11485/tvtr.15.31_19
    RESEARCH REPORT / TECHNICAL REPORT FREE ACCESS
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    There has been an increasing interest in vacuum microelectronics using micron-size field emitter arrays. We have fabricated triangle-shape and film-edge(comb-shape) lateral emitter arrays made of 0.3-μm-thick tungsten film. In the case of comb-shape array with a self-aligned gate, emission current of 120μA was obtained at gate voltage of 250V. In the paper, the principle of the field emission, comparison between emitters with various structure and preliminary experimental result for application to flat-panel displays are described.
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  • [title in Japanese]
    Article type: Appendix
    1991 Volume 15 Issue 31 Pages App1-
    Published: May 24, 1991
    Released on J-STAGE: October 06, 2017
    DOIhttps://doi.org/10.11485/tvtr.15.31_App1
    RESEARCH REPORT / TECHNICAL REPORT FREE ACCESS
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