Necessity of infrared imaging has been recognized in a lot of regions of scientific, industorial and artistic imaging fields. But the resolutions of infrared image devices are not enough for obtaining correct information and Precise data for some applications We have developed a high resolution infrared vidicon by combining the newly improved PbO/PbS target with an MS electrode (deflectron) and a diode mode gun. The key feature of the tube, high resolution (1,000 TV lines at center and 900 TV lines at corner measured by a HDTV system), is enough for the specification for those applications.

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A 811×508 pixel PtSi Schottky-barrier infrared CCD image sensor which has the greatest number of pixels in Standard TV format has been developed. This image sensor has achieved a 38% fill-factor of 18×21μm size pixel by using l.0μm design rules. optimizing the fabrication processes which are mainly about BCCD and GUARD-RING had an effect on the achievement. The noise equivalent temperature difference with f/1.2 was 0.06K at 300K.

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A back surface illuminated 130×130 pixel PtSi Schottky-barrier (SB) IR-CCD image sensor has been developed by using a new wiring structure, referred to as CLOSE Wiring. CLOSE Wiring, designed to effectively utilize the space over the SB photodiodes, brings about flexibility in clock line designing, high fill factor, and large charge handling capability in a vertical CCD (VCCD). This image sensor uses a progressive scanned interline-scheme, and has a 64.4 percent fill factor and 3.3 μm wide VCCD in a 30 μm□ pixel. The charge handling capability for VCCD achieves 9.8 × 10^5 electrons. The noise equivalent temperature difference obtained was 0.099 K for operation at 120 frames/sec with f/1.3 optics.

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The purpose of this study was to uncover the facet hidden under the art works and some cultural assets. Through the use of such non-destructive examinations as Visible, Ultraviolet, Infrared, and X-rays, new photographic data were conceived. These data after being digitalized and analized through computer were simulated on the high-quality hi-vision monitor.

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This paper describes the development of a spaceborne Stirling cycle cooler which supplies 1.2 watt cooling at 70K. In order to make 5 years operating on orbit to be possible, the cooler has non-contact clearance seals for pistons supported by suspension springs to avoid the wear of seal materials. Cooling performance and self-induced vibration levels were measured, and a life test cooler has been running for 4500 hours without any performance degradation.

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An improved 512x512-element PtSi Schottky-barrier infrared image sensor (512x512 IRCSD) has been developed by using the charge sweep device (CSD) readout architecture and 1.2 μm minimum design rules. A large fill factor of 71% is achieved in spite of a small pixel size of 26μm x 20μm. At the Schottky-barrier detector reset voltage of 4V, the differential temperature response with f/1.2 optics at 300K and saturation signal level were 3.2x10^4 electrons/K and 2.9xl0^6 electrons, respectively. The NETD was estimated as 0.033K with f/1.2 optics at 300K. This 512x512 IRCSD was designed to be operated in either the field or frame integration interlace modes for versatility.

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A 256×256-element HgCdTe Hybrid IRFPA has been developed. We focused on three technologies to realize a large scale IRFPA. The first new technology is a thin silicon readout circuit on sapphire substrate to relax thermal stress between HgCdTe diode array on CdZnTe and Si readout circuit. The second is a HgCdTe diode array with anodic sulfide (CdS) passivant and optimised cutoff wavelength to achieve high sensitivity. The third is a MOS type readout circuit with interlace scheme which has large handling capacity. Using these three technologies, we have developed a high sensitive 256×256-element HgCdTe IRFPA. The noise equivalent temperature difference (NETD) 0.06K was obtained.

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