A a-Si/a-SiC : H heterojunction SAM type photodiode was fabricated by plasma enhanced CVD. The photomultiplication was recognized and the quantum efficiency exceeded 20 on this photodiode. An injection carrier type and a multiplication layer thickness dependences were made to clarify the mechanism of photocarrier multiplication. The results of these experiments in dicated the possibility of avalanche multiplications of a a-Si/a-SiC : H SAM photodiode.

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Two operations are proposed for vertical resolution improvement of the FIT (Frame Interline Transfer) CCD image sensors, which is strongly required by the broadcasting camera users. One of them, named "Line Shutter Operation, is actually examined, and MTF at the Nyquist limitation spacial frequency is successfully improved from 0 to 0.35.

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We propose new device structures for an interline CCD for HDTV, and analyze their performance in a 2-million-pixel image sensor with a 1-inch image format. The offset-shallow p++ isolation and the completely-depleted well make it possible to shrink the channel width of the vertical CCD by 40% and to suppress the signal-to-smear ratio by 30 dB. The combined use of a tetrode transistor and fluorine implantation reduces the noise charge of the amplifier by about half. These results indicate that the interline CCD has potential for HDTV applications.

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Ten years ago, the first electronic still photography (EP) systems were introduced. Since then many companies have developed and marketed new rhotography equipment. At present, the penetration and acceptance of this new system by the consumer has fallen short of initial prediction. The main reason is the poor image qualities of output images due to the system signal standards to be based upon those of the broadcasting TV standards. Recently according to the advanced digital signal processing technologies and micro-electronics devices, the new signal standards to be sperior to the TV standards are inducing to the EP system. The improved output images from it will certainly meet with the great public favor.

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We serch the effection of dopping TbF_3 in ZnS. From the TEM image and X-ray diffraction patterns to dope TbF_3 decreses the crystallity of ZnS. Useing this result, we make the ZnS : TbF_3 TFEL which has ZnS layer between ZnS : TbF_3 and Y_<2>O_<3>. This device has the characteristic that the luminance ries rapidly. And we find electron increase in ZnS layer. This gives EL-device good characteristicis.

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