In order to clarify the kinetics of hydrogen absorption in Ti during galvanostatic cathodic polarization in 4N H
2SO
4, the hydrogen content was determind by solid state vacuum extraction at 900°C and the surface layer was examined by means of X-rays and an ion microprobe mass analyzer. In addition, cathodic and anodic polarization behavior of Ti hydride was examined using the galvanostatic and potentiostatic methods.
The results obtained are as follows:
(1) Both the
fct and
fcc types of Ti hydride were formed at low c.d. but only the
fcc type was formed at high c.d. The lattice constant of the
fcc type was
a=4.410∼4.25 Å.
(2) The rate of hydrogen absorption increased with increasing c.d. up to 20 mA/cm
2, above which the rate was independent of c.d. The rate showed a larged temperature dependence. The diffusion coefficient of hydrogen in Ti was 5∼7×10
−12 cm
2/sec.
(3) Hydrogen in the surface layer was oxidized but internal hydrogen was stable during anodic polarization of Ti-charged hydrogen.
The unitary formation rate (
R) of the TiO
2 film or the reciprocal capacitance (1/
C) calculated from the gradient of the
E-
t curve was linearly related to log
i. The rate decreased with increasing hydrogen content in Ti.
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