Magnetic and magnetoresistive properties of as-sputtered and annealed permalloy thin films have been investigated. The composition of a permalloy target used is Ni-19 mass%Fe with zero-magnetostriction. The annealing is carried out both in hydrogen and in a vacuum. The properties of electron beam deposited permalloy thin films are also investigated, comparing with sputtered films. Magnetic properties (coercivity:
Hc, magnetic anisotropy field:
Hk) and average electrical resistivity (ρ
a) of as-sputtered films increase with decreasing base pressure before the introduction of the Ar sputtering gas. Saturation magnetization (
Is) and magnetoresistivity change (
Δρ) decrease with decreasing base pressure. Therefore, the magnetoresistivity ratio (
Δρ⁄ρ
a) decreases. Moreover, the
Is and
Δρ of as-sputtered films are lower than those of EB deposited films and the ρ
a is higher, while the
Hc and
Hk are equivalent. The magnetic and magnetoresistive properties of sputtered films scarcely change by annealing in a vacuum. On the other hand, the
Is and
Δρ of the specimens increase and ρ
a decreases with annealing in hydrogen. Consequently,
Δρ/ρ
a increases, but there is little change in the properties of EB deposited films with hydrogen annealing. Auger analysis indicates that the concentration of oxygen in sputtered films is larger than that of EB deposited one and decreases with hydrogen annealing. This result suggests that the increase of
Is and
Δρ and the decrease of ρ
a are caused by eliminating oxygen from the sputtered films.
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