The efficiency of thermoelectric (TE) materials is quantified by a dimensionless figure of merit
ZT. To enhance
ZT, it is important to reduce the lattice thermal conductivity (κ
lat) with maintaining the high electrical conductivity. Cage-like compounds with phonon-glass and electron-crystal properties such as filled-skutterudites have attracted much attention as high-performance TE materials. In these compounds, the guest atoms in the cages of the host framework lattice rattle and reduce the κ
lat. Our group has focused on semiconductor
RE5X3P (
RE=Gd, La,
X=Si, Ge).
RE5X3P have a cage-like structure composed of
RE and
X, in which P can be filled in the cages. In the present study, prior to the TE characterization of
RE5X3P, polycrystalline bulk samples of
RE5X3 were prepared and their high-temperature TE properties were examined. Gd
5Si
3 and Gd
5Ge
3 showed a metallic behavior with relatively low κ
lat. At around 400 K, the κ
lat values of Gd
5Si
3 and Gd
5Ge
3 were 3.3 and 1.7 W m
−1 K
−1, respectively.
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