In this study, the effects of an ion bombardment parameter
Pi of argon (Ar), krypton (Kr) and xenon (Xe) on the internal stress and crystal structure of a nickel (Ni) thin film were discussed. Ni thin films were prepared by a DC magnetron sputtering process. Ar, Kr and Xe were used as sputtering gases. As a means of expressing the effect of ion bombardment, the ion bombardment parameter
Pi based on the magnitude of ion momentum
PG+ (G: Ar, Kr or Xe) and an impingement ratio of sputtering gas ions
iG+ to that for Ni particles
aNi was proposed. Plasma diagnostics were carried out with a single Langmuir probe during the sputter deposition. The magnitude of the ion momentum estimated from the plasma potential was independent of the cathode discharge power. With an increase in cathode discharge power, the increase in
aNi onto the substrate was greater than the increase in
iG+. It has become evident that the ratio of impingement
iG+ to
aNi onto the substrate mainly affects the variation in
Pi in relation to the cathode discharge power. The FWHM (full width at half maximum) of X-ray diffraction peaks and the internal stress of the films varied linearly with the ion bombardment parameter
Pi regardless of the sputtering gas species. The internal stress of Ni thin films could be controlled by adjusting the ion bombardment parameter
Pi.
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