It is of common knowledge that the synthesis of Ni
2SiO
4 from NiO and SiO
2 by means of solid state reaction is very difficult. In this paper, the solid state reaction between NiO and SiO
2 was studied by means of X-ray analysis, and the reaction of 2NiO+SiO
2→Ni
2SiO
4 was discussed kinetically.
When NiO was coupled with SiO
2 and heated at 1673 K for 270 ks, the reaction layer about 10 μm thick was formed at the interface between NiO and SiO
2. EPMA line analysis indicated that the reaction layer was composed of Ni
2SiO
4.
The mixture of 2NiO and SiO
2 was heated at temperatures between 1573 and 1673 K for a fixed time up to 100 ks, and the rate of reaction in 2NiO+SiO
2→Ni
2SiO
4 was determined by means of X-ray diffraction analysis. The results indicated that the above-mentioned reaction followed the next equation of interface controlled reaction.
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\
oindent(
R=rate of reaction,
k=apparent reaction-rate constant,
t=time) In this experimental condition, the apparent activation energy of the reaction was approximately 248 kJ/mol.
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