The viscosities of CaO, MgO and Na
2O-SiO
2 systems containing Ga
2O
3 were measured and an ionic form of Ga
3+ ions was discussed on the basis of the effect of Ga
2O
3 on the viscosities of the melts. For example, the viscosity changes with increasing additions of Ga
2O
3 in Na
2O-SiO
2 melts were almost same as those of Al
2O
3 in CaO-SiO
2 melts. The results indicate that Ga
2O
3 plays as an amphoteric oxide as Al
2O
3 in silicate melts. The viscosities measured in this study were well arranged and the ratio of the number of tetrahedrally coordinated Ga
3+ ions to that of total Ga
3+ ions could be calculated using a following parameter (
Pη) which corresponds to the ratio of
nO0⁄
nSi in the binary silicate melts.
The parameter
Pη is expressed by
(This article is not displayable. Please see full text pdf.)
\
oindentwhere
ZMe is the electric charge of Me ion,
ni is the ion fraction of i ion and
XGa, is the ratio of tetrahedrally coordinated Ga
3+ ions to total Ga
3+ ions.
The
XGa values of CaO, MgO and Na
2O systems were calculated as 0.481, 0.341 and 0.666 respectively. It is considered that the difference in these values between each system is due to the basicity of the basic oxides consisting of the silicate melts. Ga
2O
3 is founded to play as more basic oxide than Al
2O
3 since the values of
XGa in this study have about 70% of those of
XAl obtained in the same silicate systems.
View full abstract