Reactant gas mixture composed of TiCl
4, H
2, and N
2 was introduced to the tubular reactor and TiN was deposited on the inner wall of the reactor.
Relationships between gas flow rates and growth rates of the films were examined at 1273 K and at various gas compositions in order to determine the gas flow rates required for the reaction controlled conditions.
Under these conditions, the following empirical rate equations were obtained:
1)
R=
k1·
PN2·
PH20.5·
PTiCl4−0.2 1.52kPa≤
PTiCl4≤4.05kPa,
PN2⁄(
PN2+
PH2)≤0.5
2)
R=
k1·
PN20.5·
PH2·
PTiCl4−0.2 1.52kPa<
PTiCl4≤4.05kPa,0.5≤
PN2⁄(
PN2+
PH2)<0.67
3)
R=
k3·
PN20·
PH20 PTiCl4∼1.52kPa,
PN2⁄(
PN2+
PH2)≥0.5
4)
R=
k2·
PN20.5·
PH2·
PTiCl4−0.3 1.52kPa<
PTiCl4≤4.05kPa,
PN2⁄(
PN2+
PH2)≥0.67
\
oindentwhere
k1=1.3×10
−2 nm· s
−1 (kPa)
−1.3,
k2=1.71×10
−2 nm· s
−1 (kPa)
−1.2,
k3=3.83 nm· s
−1The apparent activation energy at
PTiCl4=2.43 kPa and
PN2⁄(
PN2+
PH2)=0.5 was determined to be 230 kJ/mol (1193∼1273 K).
From an examination of the reaction mechanism, it is concluded that the reaction rate is expressed in the following equation:
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\
oindentwhere
Piin (i=H
2, N
2, TiCl
4) is the partial pressure of i component in the reactant gas mixture,
PHCl′=(
PTiCl4in)
0.5·(
PH2in)
0.25,
k#,
KH2,
KN2,
KHCl are constants proportional to the reaction rate constant, adsorption equilibrium constants of H
2, N
2, HCl, respectively, and K
* is a constant that is related with the partial pressures and adsorption equilibrium constants of TiCl
n (
n=1, 4).
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