The p-HgCr
2Se
4/n-CdIn
2S
4 heterojunction was prepared by the method of closed-tube vapour phase epitaxial growth using 1.5 mol%Ag doped HgCr
2Se
4 single crystal as the substrate, CdIn
2S
4 powder as the source material and I
2 as a transport agent.
The constituents containing in the HgCr
2Se
4-CdIn
2S
4 heterojunction varied abruptly at the interface within the resolving power of EPMA; however, Hg and Cd only are mutually replaced with one another to a certain depth in the direction from the junction interface toward the HgCr
2Se
4 interior and the inside of the CdIn
2S
4 epitaxial layer. Although these mutual replacement depths do not depend on the substrate temperature and the temperature difference between the growth and the higher temperature ends, they depend strongly on I
2 concentration. To be more precise, the smaller I
2 concentration, the thinner are the mutual replacement regions. The existence of the mutual replacement regions was confirmed by measurement of the photovoltaic property.
The long wavelength edge of the photoresponse for the p-HgCr
2Se
4/n-CdIn
2S
4 heterojuction diodes devoid of this mutual replacement regions showed a red shift, indicating that the red shift is in good agreement with the temperature dependence of the optical absorption edge of HgCr
2Se
4.
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