We investigated thermoelectric properties of full-Heusler type Fe
2VAl thin films. In order to achieve high Seebeck coefficient (
S) and low resistivity (ρ) with low thermal conductivity (κ), we fabricated Fe
2VAl thin films with a MgO seed layer and annealed them at 800℃. The MgO seed layer and the annealing process transform the Fe
2VAl thin films into L2
1-ordered Heusler structure. The films show
S of 59.5 µV/K and ρ of 3.14 µV m together with κ of 4.43 W/m•K, which results in the
ZT of as high as 0.079. The considerably small κ compared to the one of bulk samples may originate from an enhancement of the phonon scattering due to a reduction of the film thickness.
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