SiC was bonded to SiC using Ta foils at temperatures from 1673 to 1773 K for 3.6∼144 ks in vacuum. The reaction phase and microstructure formed at the an interfaces between SiC and Ta were investigated. At the initial stage, an hexagonal Ta
2C phase is formed at the Ta side of the reaction zone, and the hexagonal Ta
5Si
3C
x phase at the interface SiC/Ta
2C. At a longer bonding time, Ta and Ta
2C were consumed and the cubic TaC, hexagonal TaSi
2 and Ta
5Si
3C
x phase were detected in the reaction zone.
The reaction layer grew with the joining time following the parabolic law, and the activation energy for the growth was 266 kJ/mol.
At a constant bonding temperature of 1773 K, the strength of the SiC joint showed a maximum at the bonding time of 28.8 ks. The brittle single phase of TaSi
2 decreases the strength of the SiC joint.
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