Normally sintered silicon carbide was joined with a Si
3N
4-Y
2O
3-La
2O
3-MgO mixture having a composition, Si
3N
4:Y
2O
3+La
2O
3=35-65:65-35 (mol%), at 1600°-1800°C for 30-90min in argon (provided that Y
2O
3/La
2O
3 molar ratio is unity and MgO content equals to 20wt%). The highest room temperature joining strength, 397MPa, was obtained by joining at 1700°C for 60min with a composition, Si
3N
4:Y
2O
3+La
2O
3=55:45 (mol%). The strength measurement at high temperature (holdihg time: 10min) showed that the strength of the same specimen was more than 300MPa up to 1000°C, but decreased rapidly above 1000°C. The joining strength decreased with holding time above 900°C. The thickness of the joining layer was about 20μm. No diffusion into silicon carbide matrix of Y, La and Mg, ingredients in the joining agent, was observed, and the joining agent formed a glassy phase after joining. These results imply that joining of silicon carbide ceramics occurred only by the wetting of oxynitride of Si
3N
4-Y
2O
3-La
2O
3-MgO system (the bending strength: about 280MPa). The lowering of jointing strength at high temperature was attributed to the softening above T
g and to the brittleness due to crystallization of oxynitride glass.
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