The characteristics of the discharge of PDP are investigated from the numerical solutions of coupled MHD equations. In this model, the motion and field are assumed to be two-dimensional and the discharge gas is assumed to be the weakly ionized plasma. All realistic effects are included. They are Hall effect, ion slip effect, and other dissipations such as viscosity, thermal conductivity, electrical conductivity. The results show that the discharge current concentrated at the left side of the anode and the right side of the cathode and the temperature of those areas is raised. The Hall effect causes the current to concentrate on the edges. The thermal diffusion is a beneficial effect in that it prevents the high temperature.
Amorphous silicon (a-Si) thin film transistors (TFTs) have become the dominant technology for driving active matrix liquid crystal displays. Gate insulator quallty is one of the most important issues in determining TFT performance. We have performed a detailed study on various insulators used in amorphous silicon TFT displays. Properties of various PECVD silicon nitrides and silicon dioxide will be discussed based on electrical and mechanical measurements and with regard to their influence on TFT processing and performance. Transistors fabricated with various insulators were characterized by measuring mobility, threshold voltage and transfer characteristics. TFTs with optimum gate dielectrics have been fabricated with threshold voltage ≈ 2.0 V, field-effect mobility > 1.0 cm^2/vs and ON/OFF ratio of over 10^7.
Amorphous silicon-silicon nitrids field effect transistors are degraded by applying the positive gate bias stress and light illumination. Thermal recovery was studied by isochronal annesling. Annesling temperature dependencies of source-drain current as well as of the threshold voltags give the evidences for the multipls steps of annesling stages. There are the avidences of the interface defect creation, and the annealing temperature of interface defect is different from that of the bulk defect.