A bipolar imaging device (BASIS : BAse-Stored Image Sensor) having charge amplification capability has beed developed. BASIS consists of a capacitor loaded emitter follower circuit for a phototransistor, which has a nondistructive signal read-out as well as a multiple output capability. Using a BASIS, an auto-focus system with a function of a strage time control following a real time peak light intensity monitering has been realized.
This paper describes the development of a new contact type inline multichip sensor, TCD8100C. New type of sensor chips are adopted in this sensor as well as new assembly technology such as new compound substrate and silicon resin potting. As the result, the sensor attained drastic decrease of manufacturing cost without the degradation of excellent electrooptical characteristics comparable to CCD's.
A 2592-pixel CCD color linear image sensor has been developed. The device has on-chip-color-filtered three(red, green and blue) arrays of 2592 photodiodes. 1-line space between red and blue arrays and 10-line space between blue and green arrays have been accomplished by using a single CCD shift register read-out structure for each color. Good color balance is obtained under illumination of a daylight fuluorescent lamp. To improve degradation of color filter toward high exposure, pigment type on-chip color filter is used.
This paper describes the development of new ultra high responsive CCD linear image sensors (TCD1100D, TCD1200D, TCD1250D). These sensors have from 6 to 8 times responsivity than conventional ones by on-chip voltage amplifier. Feedthrough level clamping circuits are also integrated on the chip to reduco KTC noise which is dominant in the low illuminance region. Furthermore, improved CCD structure and reduced input gate capacitances enable these sensors to be driven by typical 5V CMOS IOGIC IC.
A 5340-pixel CCD linear image sensor, TCD1500C, and a 3648-pixel CCD linear image sensor, TCD1300D, both are suitable for GIV facsimile system, are developed. High responsivity and low dark current are attained in both sensors by adopting high gain voltage amplifier and fully depleted photodiode structuire, respectively. Only 3 external pulses of 5Vpp are required to drive sensors because of CMOS drivers integrated on chips.