In this work, we report a decreasing number of isolated Mn in the aged EL phosphor layer, which was observed by EPR technique for the first time. Such phenomena can be explained by that during the operation of EL device, isolated Mn can easily diffuse into another site and then, the numbers of isolated Mn decrease due to forming cluster. Clustering seems to be a favorable process in this lattice due to the effect of energy lowering. Or, the electronic charge of the isolated Mn can be transfered into neighboring Mn ions via sulfur and/or sulfur vacancy. In these cases Mn^<2+> can be changed into Mn^<1+> or Mn^<3+>, Therefore, luminance may be lowered due to the decrease in the number of efficient emission center of Mn^<2+>.
In order to study large area thin film electroluminescent (TFEL) devices, large area ZnS:Mn thin film has been grown by low pressure metalorganic chemical vapor deposition. The BCPM has been chosen as the Mn source and the optimum bubbler temperature is 75℃ The ACTFEL devices with double insulating layers structure have been made and the luminance is higher than 1500cd/m^2 which is higher than the previous reports.
「人に優しいディスプレイ」が謳い文句になってきた昨今、「人問工学」という新しい範疇が、日本工業規格(JIS)の枠組みの中に今年誕生したことは、画期的な出来事である。しかし、平成5年度に日本人問工学会が受託して原案を作成したIS09241Part3対応のJIS Z 8513(仮番号)については、もとになったIS0規格そのものに正真正銘の「規格」としては問題があり、1992年当時としては本来「技術報告」に止めておけばよかったという面と、対応JIS規格としてのアジア文化的観点からの議論がある。ここでは、ディスプレイの適用範囲の問題と、画面のテキストの縦書きの取扱いの問題などを重点に、見解を述べる。
One of the important performance parameters of a color monitor tube (CMT) is the sharpness impression. This is judged by the human eyes under certain application. The perceived sharpness or focus quality of a tube is also called the readability of the tube. It is related to the tube itself and the physiology of the human eyes, the perceptive processing of the brain, and the electronics of the set / testing table. This investigation is devoted to finding out a suitable / comfortable method or pattern for focus setting and classifying under the customer-like conditions.
With an eye on high conductivity, antimony was introduced to pure SnO2 crystals. Through Coprecipitation and cross flow microfiltration of SnO2 and Sb2O5, doping of antimony in SnO2 by autoclaving, dialysis to remove undesired ions. sonifying of the final product, very tiny ATO particles were obtained. The anti-static coating solution containing ATO particles was applied by spin coating technique. After proper baking process, a uniform antistatic film with good electrical and mechanical properties can be achieved.
The 1st Korea-Japan Joint Vacuum Microelectronics Symposium was held in Seoul on July 9, 1993 in conjunction with the 5th Korean Vacuum Society Meeting. It was the predecessor of the 2nd Asian Vacuum Microelectronics Conference. It must be fortunate that the meeting has been extended to an Asia wide one. Ten invited speakers, five from each country presented talks at the Symposium. The Symposium was quite successful, and called intensive attention to the fields of vacuum microelectronics in Korea. The growing R & D activities, especially for the STM, AFM, FED, ELD, LCD and TFT technologies are noteworthy. A condiderable number of works have been reported at various academic meetings such as the Korean Vacuum Society Meeting, the Korean Semiconductor Conference, and group VME seminars. Recently, a new FEAD System developed and constructed by the J.D. Lee's Team of Seoul National University Semiconductor Research Center and Uni-Vacuum (Univac) was installed.
Gated-Field-Emission Triode from the cone-tip formation process to its emission properties has been systematically characterized. Process simulation shows that the successful formation of the microtip structure is mainly determined by the migration length of the e-beam evaporated layer. The measured triode characteristics matches well with the simulated program in the saturation region with proper tip radius adjustment without an artificial field enhancement factor. The calculated enhancement factor matches well with other published data.
This paper describe the use of Taguchi methods and a simulation tool to optimize the gated emitter for use In the Field Emission Display. Since analog data are needed for a full color FED, the device is optimized to achieve a linear dynamic response. The radius is considered as the uncontrollable factor and is assigned as noise factor. According a L18 orthogonal array, the emission condition is modeled and the factors affecting the emission are grouped in order to their importance. This provided the designer a new look into the device structure used for color FEDs.
Gated field emitter arrays fabricated by Transfer Mold technique and field emission properties are described. Because of the sharpening effect on the tips by the Si single crystal mold surface oxidation, emitter tip radii are as Small as less than 10 nm. The Fowler-Nordheim Plots of the Mo gated emitter array became a straight line and l-V characteristics indicated rectification. Transfer Mold technique is suitable for fabricating sharp, uniform and reproducible gated emitter arrays, and for selecting appropriate emitter materials.
The small internal volume of devices, such as FEDS and in general vacuum packaging of microelectronic devices, makes it more critical the choice of a suitable getter. Besides the geometrical constraints, the getter must meet other requisites: it is often needed that it is activated at temperatures not exceeding 400-500℃, exhibits high sorption performance at room temperature and good mechanical strength. Getters have been developed in different configurations including relatively thin porous layers deposited onto a metal substrate to meet these requirements. The sorption performance of such getter structures, for the main active gases and their physico-mechanical chardcteristics are reviewed and discussed, also giving some applicative hints.