We have studied the fabrication of hydrogenated amorphous silicon(a-Si : H) thin film transistors by ramots-plasma chemical vapour deposition(RP-CVD). The effects of rf power, buffer layer between the gate insulator and a-Si : H, ohmic contact, and the surface oxidation on the performances on the a-Si : H TFT's have been investigated. As a result of the optimization of preparation conditions, we have made a TFT with a mobility of 1.2 cm^2/Vs, threshold voltage of 2.0V, and on/off current ratio of >10^6.
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