In LCDs, poly-si Thin Film Tranports (poly-Si TFTs) have the potential to realize higher pixel density, higher aparture ratio and faster pixel TFT operation than a-Si TFTs. However, a simulator enable to analysis of poly-Si TFT is not on the market . In this paper, it is described we modified crystalline-Si MOSFET model of usual Spice and made poly-Si TFTmodel. Using this model, the Spice is able to simulate poly-Si TFT. We can estimate a optimaized value of Vgl on 640*480 dots n-ch poly-Si TFT-LCD.
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