A 3CCD color camera is studied with 2/3-in 2M-pixel STACK CCD sensors for development of HDTV handy-type cameras. A 5ldB S/N ratio is achieved under F8 2000lux condition by using the AGI (Alternate Gain Inversion) signal processing.
We have developed an x-y address type area sensor for high-speed videography. It has 256(V)x256(H) pixels that can be read in a parallel mode along its 16 channels. This sensor was incorporated in a high-speed video camera system. The camera shoots at a maximum framing rate of 4,500 fps (frames per second), full frame, and 40,500 fps segment-frame mode. This paper outlines the high-speed video camera system.
We have developed the FOP directly coupled with scintillator for CCD to obtain high resolution X-ray image. The sensor has been achieved much higher resolution than the conventional phosphor screen type. We evaluated resolution and conversion factor (sensitivity) conserning with particle size, film thickness and dye. Also, we refer to the development of slant FOP for the purpose of up-sizing and cost down.
Highly sensitive X-ray fluoroscopy test for fine defects in ceramics is presented. Instead of conventional integral image processing on fluoroscopy test, a new type of testing with image subtraction method is proposed. By using the new testing method, in addition to reducing random noise till very low level, other components of noise in X-ray TV image can be greatly reduced because of detecting of only moving points of defects in the TV image, which can enhance the image contrast of the defects remarkably. Very high detectability more than usual film method can be obtained.
We have developed a 250K pixel amplifying type solid-state imaging sensor(AMI) of a 1/4 inch format with a new circuit technique using 0.8 μm design rule. Simultaneously we have developed a test device for fixed pattern noise (FPN), and actually measured it. The FPN of AMI is not affected by the gate length of mixing transistor Tg and switching transistor Ty, but also largely by the gate length of amplifying transistor Ta and resetting transistor Tr. The correlation index of them is observed to be 25 for Ta, and 20 for Tr.