A highly conductive, transparent film of In
2O
3 : Sn with good uniformity was deposited on a large glass substrate having an area of 60 × 90 cm. Deposition was carried out by passing the substrate over the source located off from the center line of movement. After the first deposition, the substrate was returned to the initial position and turned there by 180°. Then, the same process was repeated again. This design can be easily developed into a manufacturing process.
The uniformity variation of the coating thickness and that of the film resistance were as low as 10% and 25% respectively. In addition, the specific resistivity of 2.53.0 × 10
-4Ω· cm and the visible transmittance of about 90% were obtained all over the deposited area. It was confirmed that the relatively poor uniformity in resistivity was due to the dependence on the deposition rate.
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