Shinku

LaB₆ Thermionic Electron Emitter and its Surface Properties

Chuhei OSHIMA, Masakazu AONO

1981 Volume 24 Issue 5 Pages 287-295
Published: May 20, 1981
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.24.287

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Fabrication of Large Josephson Tunnel Junctions and Evaluation of their Basic Properties

Katsuyoshi HAMASAKI, Keiji YOSHIDA, Fujio IRIE

1981 Volume 24 Issue 5 Pages 296-306
Published: May 20, 1981
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.24.296

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Large Josephson tunnel junctions have been fabricated using the dc plasma anodization method and their basic properties have been studied by the comparison between theory and experiment. It is shown that the uniformity of the tunneling barrier layer can be evaluated by the quasi-particle tunneling current and the magnetic field dependence of the maximum zero-voltage current. Many interesting phenomena have been observed in dc current-voltage characteristics of large Josephson junctions in the presence of a microwave radiation, and it is shown that they result from vortex motion induced by the applied microwave.

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Growth of ZnTe by Solid-state Reactions of Mixture Zn and Te Layers Prepared by an Ion Beam Evaporation Technique

Susumu TAMURA, Katsuhiro YOKOTA, Hideki KAI, Saichi KATAYAMA

1981 Volume 24 Issue 5 Pages 307-315
Published: May 20, 1981
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.24.307

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Zn and Te layers were deposited on n-type (111) Si substrates by a vacuum evaporation technique and an ion beam evaporation technique. Thin ZnTe layers were grown on Si substrates when these samples were heated at temperatures of 300 460 °C for 120 720 sec. (111) plane of the ZnTe layers grew predominantly on (111) Si substrates. The ZnTe layers were p-type semiconductors with the carrier density of 2.55 × 10¹⁴ 3.98 × 10¹⁵ cm^-3. ZnTe layers grown from the thin layers prepared by mixture ion beams of Zn and Te have hardly stripped from the Si substrates. ZnTe layers prepared by other techniques have easily stripped. When the Zn and Te layers deposited on the Si substrates by the ion beam evaporation technique were annealed at temperature of 400 °C for 720 sec, both of diode and photocurrent properties on the heterojunction of ZnTe (p) -Si (n) was better than those of samples prepared by other technique.

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Simulation of Ion-beam Etched Pattern Profiles

Hisanao TSUGE, Sotaro ESHO, Hiroshi GOKAN

1981 Volume 24 Issue 5 Pages 316-321
Published: May 20, 1981
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.24.316

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Redeposition effect is one of the most important factors in determining profiles of fine patterns delinated by ionbeam etching. A three-dimensional simulation of pattern profiles based on the redeposition effect was carried out, first, using revolution ellipsoids as angular distributions of sputtered atoms, and secondly, using experimentally obtained distributions. Consequently, pattern width difference between mask and substrate decreases as the angular distribution changes from undercosine to overcosine. The pattern width difference, which gives a maximum value the bottom of etched patterns, is almost independent of pattern gap width. Pattern sidewalls become steeper with increasing gap width or with decreasing etched depth. The simulated pattern profiles are in good agreement with the experimental results.

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Thermoelectric Power of the Vacuum-Evaporated Gold Films

Minoru YAMAGUCHI, Masaki NAKAMURA

1981 Volume 24 Issue 5 Pages 322-324
Published: May 20, 1981
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.24.322

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