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Volume 10, Issue 10
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Tadao INUZUKA, Ryuzo UEDA1967 Volume 10 Issue 10 Pages 341-349
Published: October 20, 1967
Released on J-STAGE: September 29, 2009
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Kinichiro NARITA1967 Volume 10 Issue 10 Pages 350-357
Published: October 20, 1967
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSLuminescence properties under uv light and dc field excitation are reported. X-ray diffraction patterns and emission spectra were studied. The solid solutions of thin films with nearly the same composition as source material were obtained, when evaporated at 800°C or 1000°C. Emission spectra depended on the surface of the film, the glass substrate side or the opposite side, on which uv light was irradiated, especially in the samples fired in air after deposition. The samples with latent luminescence centres due to Mn ions, at least, at the side of glass substrate were obtained by the following method ; powder sample with the amount of added Mn ions of 10×10-2 g ·atom/mole host crystal was evaporated at 1000°C, and then the deposited samples on glass substrates were fired at 600°C in air or at 700°C in Ar gas flow. However, effective field could not be applied to the sample fired at above 600°C. The sample fired at 500°C in air was two times higher in its emission intensity under simultaneous excitation of uv light and dc field than under excitation of uv light. The above sample also showed EL under excitation of ac field.View full abstractDownload PDF (1492K) -
Toru KISHI, Chaji FUKUDA, Takeshi MIYAUCHI1967 Volume 10 Issue 10 Pages 358-363
Published: October 20, 1967
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSSome properties of Gallium Antimonide films evaporated on the slide glass for substrate temperature range between 100°C to 400°C by the flashing method have been investigated experimentally. And the thickness of samples was about 6000Å, and the evaporation speed about 130Å/min.
X ray diffraction patterns of the samples showed the existence of Sb crystals up to 250°C300°C, Over 300°C the peaks for Sb crystals disappeared and the diffraction intensities of GaSb increased with substrate temperature. Between 350°C and 400°C the patterns corresponding to ones of bulk material was obtained.
And the transmittance of films deposited below 250°C was not observed in infrared region. But above 300°C the discontinuity of transmittance started to appear in the range of 800850 mμ and the transmittance reached constant at about 1800 mμ neglecting the interference term.
Electrical properties of the sample at 400°C showed that the impurity concentration and conductivity was 7. 73·1018/cm3and 120 Ω-1 cm-1 respectively at 300°K. Therefore the mobility was 114. 5 cm2/volt·sec.
The sample annealed at 450°C for 2 hours in vacuum showed less Hall coefficient and less conductivity than not annealed film.View full abstractDownload PDF (890K) -
[in Japanese]1967 Volume 10 Issue 10 Pages 364-367
Published: October 20, 1967
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSDownload PDF (779K)
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