Films of α-HgS up to 3.5μm thick have been grown on glass substrates by rf-sputtering techniques. Dependence of film structure on substrate temperature, rf-power density and film thickness have been studied by reflection electron diffraction. At substrate temperatures below 80°C with rf-power densities ranging from 0.2 to 1.2 W/cm², the deposited films were polycrystalline with a <1120> fiber texture of α-HgS and were yellow-orange color, highly transparent, good adherence and stable up to 280°C in atmosphere. At the substrate temperatures above 80°C, the deposited films were polycrystalline with < 111> and < 110 > fiber texture of β-HgS at lower and higher power densities, respectively. X-ray powder patterns revealed that the lattice constants of rf-sputtered α-HgS films were similar to those of ASTM data and had little influence on rf-power density and annealing.

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A low energy (_??_ 3 keV) rare gas ion scattering system (scattering angle is fixed at θ=90°), which is enclosed in Pyrex glass envelop, is constucted and its characteristic performance are described. In the scattering experiments, helium ion beam having primary energy of 1.5 keV is mainly used, and a lot of scattering experiments have been carried out for varions target materials; which are stainless steel, molybdenum, graphite, nickel and gold or palla dium coated nickel, etc. Based on the experimental results, the imrpovement of the designed scattering system and the applicability of ion backscattering technique for surface study are discussed.

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