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Construction of Nanobiomachine by Bottom-up Approach
Noboru YUMOTO
2004 Volume 47 Issue 3 Pages
93-98
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Tadashi SAWADA
2004 Volume 47 Issue 3 Pages
99-103
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Kazuhiro YAMAMURO, Naoki TAKAHASHI, Naoki MIZUTANI, Junpei YUYAMA, Tom ...
2004 Volume 47 Issue 3 Pages
104-107
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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The digitally controlled radio frequency (RF) output circuit for the quadrupole mass spectrometer is reported. The circuit does not include the nonlinear negative feedback circuit that reduces the accuracy for the control of RF output voltage. The mass spectra for residual gasses, Kr and Xe, those mass resolution at 10% peak height of less than 0.5 (M/z = 1 to 66) and less than 1 (M/z = 80 to 132), respectively, were obtained with this circuit. The separation of the peaks for
4He and D
2, that corresponding to the mass resolution less than 0.0256, were also observed by using the second stability zone of Mathew's equation.
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Effect of exposure time in the atmosphere on gas desorption
Masao HASHIBA, Yuko HIROHATA, Tomoaki HINO, Hidekazu YAMADA, Akio KOID ...
2004 Volume 47 Issue 3 Pages
108-111
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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For two types of inner coating material of cathode ray tube (CRT) with different composition of water glass, the effect of air exposure in the atmosphere on the gas desorption was examined by using thermal desorption spectroscopy. The major outgassing species during the heating up to 773 K were CO
2 and H
2O in both the types. In the thermal desorption spectra of CO
2 and H
2O, a large desorption peak was observed at approximately 400 K. In both the materials, the amount of desorbed gases saturated at the exposure time of 1 h. Total amount of desorbed CO
2 and H
2O for the type with water glass content of (K
2O + Li
2O) ·3.8SiO
2·4H
2O was approximately a half of that for the type with water glass content of K
2O·3.8SiO
2·4H
2O. The surface morphology of the former type showed fine structure compared with that of the latter type. If the former type is used for the inner coating material, the manufacturing process of CRT may be shortened compared with that of the latter type.
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Naoyuki WADA, Hiroki KURISU, Takeshi MURANAKA, Setsuo YAMAMOTO, Mitsur ...
2004 Volume 47 Issue 3 Pages
112-115
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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We have investigated the thermal desorption properties and the temperature dependence of surface characteristic of a titanium alloy material using thermal desorption spectroscopy (TDS) and X-ray photoelectric spectroscopy (XPS). The results show drastic changes on the titanium oxide core XPS levels (TiO
2 : 2P
1/2, 2P
3/2) of the surface, i.e. the TiO
2 decomposed into the suboxides at 200°C, the suboxides vanish and metal Ti appears above 450°C. This sensitive change of the surface oxide layer affects to the hydrogen gas desorption of a titanium alloy, e.g. amount of the hydrogen gas desorption drastically increases with temperature above 450°C. This implies that the surface oxide layer acts as a barrier for the bulk hydrogen diffusion.
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Takeshi MURANAKA, Hiroki KURISU, Naoyuki WADA, Setsuo YAMAMOTO, Mitsur ...
2004 Volume 47 Issue 3 Pages
116-119
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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We have investigated the pre-baking effect for the outgassing property of a titanium alloy. The outgassing rate of the order of 10
-12 Pa · m · s
-1 is obtained after the modest baking condition, e.g. 100°C × 3 h. This value is lower than that of standard vacuum materials by two orders of magnitude after the ordinary baking condition, e.g. 180°C ×48 h. From the Arrhenius plots of the outgassing rate after the baking at 150°C × 20 h, the activation energy
Eq for the outgassing is 0.45 eV. This value is smaller than that for the hydrogen diffusion dissolved in bulk titanium. It is interpreted that the very low hydrogen content occurs at the surface oxide layer by the modest pre-baking treatment.
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Shinichiro MICHIZONO, Yoshio SAITO, SUHARYANTO, Yasushi YAMANO, Shini ...
2004 Volume 47 Issue 3 Pages
120-123
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Electrical breakdown (surface discharge) is one of the most serious problems for developing compact and/or higher voltage insulation in a vacuum. High secondary electron emission (SEE) yields result in the multipactor (electron multiplication on the dielectric surface). Multipactor induces not only discharging but also excess surface heating, leading to localized surface melting. Thus, SEE at high temperature is important for understanding the actual breakdown process.
The SEE yield of single crystal alumina (sapphire) and anti-multipactor coatings, such as TiN and DLC films having low SEE yields, are measured with a scanning electron microscope (SEM) by pulsed-beam method. In order to examine the surface charging, multi-pulse methods are also carried out for the sapphire disk at high temperature.
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Kenichi IMAKITA, Masakiyo TSUNODA, Migaku TAKAHASHI
2004 Volume 47 Issue 3 Pages
124-127
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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The effects of body centered cubic (BCC) solid solution underlayers on the metallurgical size and flatness of Cu thin films, fabricated on them, were investigated. As the underlayer materials, Cr
80Al
20, Cr
90Ni
10, Cr
80Fe
20, Fe
75Cr
25 and Fe were examined. Lateral grain size of the Cu films fabricated on the Cr-Al, Cr-Ni, Cr-Fe, Fe-Cr under layer was enlarged, comparing to that on the Fe underlayer. The difference between the surface energy (γ
XS) and the interfacial energy (γ
X-Cu-SL) of these underlayer is close to the surface energy of Cu at the melting point (γ
CuS (
Tm)). However, the surface roughness of Cu films simultaneously increased with increasing the lateral grain size. In order to suppress the surface roughening of Cu films, post-thermal annealing procedure was applied under the ultra-high vacuum for the films fabricated on the Cr-Ni and Cr-Ni-Fe underlayers. We finally succeeded to enlarge the lateral grain diameter more than 100 nm for 50-nm-thick Cu films, maintaining a flat surface (
Ra = 0.32 nm).
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Dependency of single SOFC performance on temperature of annealing treatment
Tomoaki MIICHI, Akifumi NISHIMOTO, Akiyoshi NAGATA
2004 Volume 47 Issue 3 Pages
128-131
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Solid oxide fuel cell (SOFC) having a thin yttria-stabilized zirconia (YSZ) electrolyte was prepared using the RF magnetron sputtering growth. Experimental conditions were as follows : RF power was 200 W, the sputtering duration was 10 hours and the pressure of the chamber was 0.75 Pa. The dependency of the SOFC performance on the temperature of annealing treatment was investigated. The density of thin YSZ film was improved with an increase in the annealing temperature, although the density of the Ni-YSZ cermet substrate increased at the annealing temperature of 1300°C. The open circuit voltage of a single SOFC obtained 0.877 V at the operating temperature of 1000°C when the annealing temperature was 1200°C. Moreover the resistance of the cell was 2.2 Ω. Above values exceed results without annealing treatment.
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Kenichi HIRAI, Tomoaki MIICHI, Akiyoshi NAGATA
2004 Volume 47 Issue 3 Pages
132-135
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Solid oxide fuel cell (SOFC) having a thin yttria-stabilized zirconia (YSZ) electrolyte was prepared on the anode electrode of a porous Ni-YSZ cermet substrate using the RF ion plating method. The constitutional YSZ electrolyte films were characterized based on dependence on the electron beam current and annealing treatment. A thin YSZ electrolyte film evaporated at higher electron emission current indicated a columnar structure with longitudinal pinholes in the film. By annealing temperature above 1300°C, YSZ film was improved as a denser film having a bulk electrolyte structure. Furthermore, the conductivity of thin YSZ film was increased with increasing the annealing temperature, although its conductivity became smaller by about three figures than the theoretical value of the bulk electrolyte.
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Hirofumi KONISHI, Hironori MATSUOKA, Naotake TOYAMA, Masamichi NAITOH, ...
2004 Volume 47 Issue 3 Pages
136-139
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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We have investigated laser irradiation effects on the growth of carbon nanotube (CNT) on 6H-SiC (0001) surfaces. High-alignment CNT was vertically formed on a 6H-SiC (0001) surface by annealing the substrate at 1700°Cin a vacuum, without laser-irradiation. However, an amorphous carbon layer was formed on the 6H-SiC (0001) surface and the CNT growth was suppressed when the surface was treated by the ArF excimer laser with about 0.01 J/cm
2 for 5 min in air before being annealed. Samples were analyzed by transmission electron microscopy and electron diffraction.
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Toshihiko YOSHIMURA, Kazunori INAMI, Youji YAMASHITA
2004 Volume 47 Issue 3 Pages
140-142
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Using the simple sample which equipped a needlelike sample of tungsten with the carbon nanotube, V-I measurement of Multi-wall carbon nanotube (MWNT) was able to be performed and an FEM image and FIM image were able to be observed. In the measurement of the V-I characteristic, MWNT with low threshold value of voltage was found out. Further, in FEM observation, a five member ring which constitutes NT tip were recognized. Six member rings which constitute NT were also found in FIM observation.
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Shinya SATOH, Hideaki NAKANE, Hiroshi ADACHI
2004 Volume 47 Issue 3 Pages
143-146
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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It is observed that field emission electrons are dominantly extracted from a (100) surfaces of a molybdenum sharp needle emitter, when the surface is modified with zirconium oxide. The work function of the surface is estimated from Fowler Nordheim plots. The estimated average value is 2.1 eV, which is remarkably small compared with a commonly accepted value of work function for a ZrO/W (100) thermal field emitter, namely 2.7-2.9 eV, while the smallest reported value is 2.4 eV. It is expected that smaller values of work function are desirable for cathode materials to get fine focused electron beams, because less chromatic aberration can be realized. It should be noticed from practical view points that the reduced work function is reproduced easily by several times of flash heating after exposed to air.
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Satoru SUKENOBU, Keisuke INAMI
2004 Volume 47 Issue 3 Pages
147-150
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Monte Carlo simulation was applied for the evaluation of flow rate and pressure variation under molecular flow condition. The results were compared with the analytical solution of the diffusion equation. The tendency of the time response of calculated gas flow rate and pressure was similar to the analytical results. However, it was found that the delay time of the calculated flow rate and pressure is larger than that of analytical result. The normalized delay time decreases with the pipe length to diameter ratio (
L/d), and it tends the analytical results.
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Akira KUROKAWA, Sonoko TSUKAHARA, Takichi KOBAYASHI, Hisao HOJYO, Shin ...
2004 Volume 47 Issue 3 Pages
151-154
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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A concentration measuring method for a binary gas system, which was based on the viscosity measurement, was investigated. The method utilizes two types of pressure gauges, a capacitance manometer which depends just on pressure and a quartz friction pressure gauge which depends on both viscosity and pressure of a binary gas. The concentration of the binary gas can be estimated from the viscosity because the viscosity is given as a function of concentration of the binary gas. Firstly we applied the pressures-observing system to evaluate concentration of ozone in an O
3/O
2gas mixture. The results indicated that this method allows a concentration measurement of ozone with an accuracy of
Δ Cozone = 0.2 vol%, near atmospheric pressure. Secondly, we used an impedance measurement system of a quartz oscillator and we estimated the accuracy at
Δ Cozone=0.05 vol%.
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Muneyuki TSUDA, Wilson Agerico DIÑO, Hiroshi NAKANISHI, Hideaki ...
2004 Volume 47 Issue 3 Pages
155-158
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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We investigate and discuss the catalytic reactivity of a transition metal M (M : Pt, Pd, Ni and Cu) atom on cyclohexane dehydrogenation by performing total energy calculations, based on the density functional theory. Total atomic charge investigation along the reaction path shows that in breaking a C-H bond of the cyclohexane, the σdonation dominates for a Pd and Cu atom as compared with a Pt atom, and the π back-donation dominates for a Ni atom as compared with a Pt atom. Our results indicate that the excess charge transfer causes more energy required for breaking the C-H bond of the cyclohexane with a Pd, Ni and Cu atom.
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Yasuhiro YAMAUCHI, Michiko YOSHITAKE, Weijie SONG
2004 Volume 47 Issue 3 Pages
159-162
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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We succeeded in growing the flat Al
2O
3 film on the Cu-9%Al (111) single crystal surface over a large area using the improved cleaning process, that is, low Ar ion energy and short time sputtering, and investigated the surface morphology and natures of chemical bond of Al
2O
3 film on the Cu-9%Al by means of Auger electron spectroscopy (AES) and a scanning electron microscopy (SEM). The Al
2O
3 film surface prepared by this method was uniformly flat, and the maximum thickness was about 4.0 nm. The Al and O KLL Auger peaks from Al
2O
3 film shifted toward low kinetic energy, and the shift reflected to band bending in the Al203 film near interface.
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Mitsutaka HIRAGA, Kiyotaka MIKI, Yotaro KONDO, Shyunsuke FUKAYA, Shige ...
2004 Volume 47 Issue 3 Pages
163-166
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Bias current dependence of the work function of the Bi
2Sr
2CaCu
2O
8 cleaved at about 30 K was measured by means of Kelvin-Zisman automatic method. In the superconductive state, the work function roses nonlinearly, and the temperature gradient of the work function also roses and became almost constant with the increase in the bias current. These results were discussed from the viewpoint of the contribution of the Fermi-energy and the surface dipole barrier.
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Hiromi TANAKA, Osamu NAGASHIMA, Satoru KISHIDA, Hideki YOSHIKAWA, Masa ...
2004 Volume 47 Issue 3 Pages
167-170
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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We prepared Bi
2Sr
2CaCu
2O
y superconducting single crystals by a modified vertical Bridgman method using the Curich melt with the compositions of Bi : Sr : Ca : Cu = 2 : 2 : 1 : x (x = 2.0 and 3.0), and investigated their chemical states with a high-resolution X-ray photoelectron spectroscopy (XPS).
From the XPS results, we found that the shape of the Cu-2p
3/2satellite peak from the surface of the single crystal grown with x = 3.0 has changed in comparison with that of the single crystal grown with x = 2.0, which indicates that the chemical bonding nature in CuO
2 plane has slightly changed from covalent to ionic bonding. The slight change of the chemical bonding nature gave us the consistent understanding of the semiconductive behavior at the normal state and low T
c = 74 K in resistance-temperature characteristic of the single crystal grown with x = 3.0.
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Tetsuya IWAI, Goro MIZUTANI
2004 Volume 47 Issue 3 Pages
171-174
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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We have performed SH spectroscopy on a reconstructed Au (100) 5 ×20 surface. We have found a broad SH intensity continuum for the SH photon energy from 2
hω= 2.2 to 4.2 eV. The SH intensity in the Sin/Pout (
s-polarized input and
p-polarized output) polarization configuration is higher than that in Pin/Pout polarization configuration between the photon energies 2
hω = 3.7 and 4.2 eV. However this inequality was reversed when the surface was exposed to air. Thus, the SH response in this photon energy region is attributed to surface electronic states. The observed broadness of the structures in the SH intensity spectra may be attributed to the dispersion of the surface electronic states caused by the increased interactions among the localized
d-electrons on the Au reconstructed surface.
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Zenta KUMABUCHI, Tadafumi MIYANO, Katuhiro KAWAI, Keishi KAWABATA, Hid ...
2004 Volume 47 Issue 3 Pages
175-178
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Nickel thin films for an electromagnetic wave shield were produced by magnetron sputtering with multipolar magnetic plasma confinement (MMPC). The characteristics of the electromagnetic wave shield have been measured by the Kansai Electronic Industry Development Center (KEC) method. The effectiveness of the electromagnetic wave shields of electric field and magnetic field depends significantly on the thickness of Ni thin films deposited on the glass substrate. The shielding effectiveness of the electric field, measured at 800 MHz for 5 μm-thick deposited films, was 92 dB. The value was similar to a 2 mm-thick aluminum plate. For the magnetic field, its effectiveness was 73 dB. It is shown that the dependence of film thickness on the electromagnetic wave shield is due to attenuation loss.
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Hideaki AGURA, Akio SUZUKI, Takanori AOKI, Tatsuhiko MATSUSHITA, Masah ...
2004 Volume 47 Issue 3 Pages
179-182
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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ZnO doped with 1.5 wt.% Al
2O
3 (AZO) and 5 wt.% Ga
2O
3 (GZO) films were deposited on glass substrates by pulsed laser deposition method. In all experiments, repetition rates of 10 Hz, the energy density of 2 J/cm
2, and an ablation time of 20 min irrespective of magnetic field. For AZO films deposited in magnetic field, the diffraction peak of ZnO (0002) facets grew large and a crystallinity improved. On the other hand, for GZO films fabricated with or without magnetic field, the crystallinity did not change. It was observed that for AZO films fabricated with magnetic field, the transmittance increased in the visible wavelength range and decreased in the infrared range being reflective of the reduction of carrier concentration.
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Shigeyasu HOKI, Akio SUZUKI, Takanori AOKI, Tatsuhiko MATUSHITA, Masah ...
2004 Volume 47 Issue 3 Pages
183-186
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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ITO (In
2O
3 doped with 5 wt% SnO
2) films were grown on glass substrates at room temperature by the pulsed laser deposition method using an ArF excimer laser that provides 40 mJ (1.4/cm
2) pulses of 1216 ns duration at a repetition rate of 10 Hz. Ablation time was 20 min and gas pressure of oxygen was 45 Pa. After the deposition process was finished, the ITO films were annealed for 30 min by the excimer laser regulated to give a weak energy density of 414 mJ/cm
2. As a result, the resistivity of the film decreased from 3.14×10
-3 Ω ·cm to 9.66×10
-4 Ω·cm and the surface roughness Ra improved from 0.69 nm to 0.46 nm.
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Takayuki HARAGUCHI, Masaaki NISHIKAWA, Yoshihiko UEDA, Soichi OGAWA
2004 Volume 47 Issue 3 Pages
187-190
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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We deposited indium-tin oxide (ITO) thin films as transparent conductive electrode on no heating substrate by the facing targets sputtering system. The substrate temperature during the deposition was lower than 40°C. The ITO film showed resistivity of 5.2 × 10
-4 Ω·cm and light transmittance over 90% at 550 nm, which was obtained by changing deposition pressure and O
2 gas flow rate during the deposition. Surface morphology and the crystal structure were analyzed by AFM and XRD, respectively. Surface average roughness Ra and surface maximum roughness Rmax were 0.46 nm and 7.4 nm, respectively. The XRD analysis revealed entirely amorphous structure.
We also obtained the ITO films with resistivity of 4.1 × 10
-4 Ω·cm by stable low voltage sputtering with DC + RF discharge.
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Nobuhiro YAGI, Hideki YOSHIKAWA, Sei FUKUSHIMA, Koji KATSURAHARA, Satu ...
2004 Volume 47 Issue 3 Pages
191-193
Published: March 20, 2004
Released on J-STAGE: January 29, 2010
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We prepared Bi
2Sr
2CaCu
2O
y (Bi-2212) films by rf magnetron sputtering with the method with controlled shutters, and using an off-axis geometry, where a mixture of He with oxygen (He : O
2 = 4 : 1) was used as a sputtering gas. In this method, we used the two compound targets, Bi : Sr : Cu = 2.07.0 : 1.52.0 : 0.30.5 and Ca : Cu= 1.02.0 : 1.0. From the results, the method with controlled shutters was available to adjust the composition ratio on the substrate. And, we found that main phase of the films were a Bi-2201 although the composition of the films was approximately equal to that of an ideal Bi-2212. Thus, according to find out the optimum condition of Bi-2212 we found that there was possibility to fabricate the high quality films. This study underlines the high accuracy sputtering controlled shutter.
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Naoki FUJIWARA, Takahiro ONISHI, Kouji KATSURAHARA, Satoru KISHIDA
2004 Volume 47 Issue 3 Pages
194-196
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Crystallizations under magnetic field have being flourished. Using rf magnetron sputtering method under high magnetic field we formed Bi
2Sr
2Ca
n-1Cu
nO
y (Bi-based) superconducting thin films. Some of the deposited films showed zero resistance. Oxidization of films may be accelerated by applying magnetic field.
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Atsushi SAKURAI, Yoshifumi AOI, Eiji KAMIJO
2004 Volume 47 Issue 3 Pages
197-199
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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TiN/BN ceramics multilayer films were deposited on Si (100) substrates by ion beam sputtering (IBS) under various deposition conditions. The deposited multilayer films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Knoop hardness, and Multi-Beam-Optical Sensor (MOS). Internal stress of the multilayer thin films were changed by the multilayer periods (λ). Maximum hardness and internal stress of the multilayer thin films were observed at λ= 1530 nm. The enhancement effect in hardness and internal stress may be presumed the strain generation due to lattice stress at the interface between alternate ceramic thin films.
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Shinji Minamisawa, Nobuhide Miyakawa, Hirofumi Takikawa, Tateki Sakaki ...
2004 Volume 47 Issue 3 Pages
200-203
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Macroscopic process parameters of arc voltage, cathode erosion rate, droplet emission rate, ion current, and deposition rate were measured in T-shape filtered cathodic arc deposition using various kinds of carbon cathode materials. Strong correlation between deposition rate and ion current was found. When the ion current was higher, the deposition rate was higher. However, the higher cathode erosion rate did not always brought the higher ion current, and the droplet emission rate was mildly tended to increase as the ion current increased. As a comprehensive evaluation, the optimum cathode material in the present study was considered to be pure graphite. However, the materials of carbon graphite and that including Si hardly emitted the droplets, suggesting the future possibility of the development of droplet-free carbon cathode material.
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Hagane IRIKURA, Yoshio HASEGAW, Yoshikazu TAKAHASHI
2004 Volume 47 Issue 3 Pages
204-207
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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At present, many antimicrobe relation goods are being put on sale. Many these products have got the effect by adding the antibacterial agent to plastics, etc. However, it was difficult to uniformly apply the antibacterial agent to wholes such as parts of the complicated shape. We tried preparing antibacterial polyimide films by vapor deposition polymerization of 3, 5-diamino benzoic acid (DBA) and anhydrous pyromellitic acid (PMDA) with the structure of benzoic acid on antibacterial agent. The antimicrobe performance of polyimide film which produced the antimicrobe test was evaluated using film contact printing (JIS Z 2801). The antibacterial polyimide showed antibacterial effects for Staphylococcus aureus, Escherichia coli, Bacillus subtilis, Pneumonia bacillus, Pseudomonas aeruginosa, and MRSA.
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Yonglong JIN, Goro SAWA, Yoshiyuki UCHIDA, Kenzo KOJIMA, Asao OHASHI, ...
2004 Volume 47 Issue 3 Pages
208-211
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Orientation control of vanadylphthalocyanine (VOPc) thin films deposited with different thicknesses on Pt (111) substrate were investigated by Vis/UV spectra measured by Vis/UV spectroscopy, XRD profiles analyzed by X-ray diffractometry (XRD), XPS spectra analyzed by a X-ray photoelectron spectroscopy (XPS) and AFM images observed using an atomic force microscope. The orientation of VOPc molecules deposited on a Pt (111) single crystal substrate is influenced by the oxidization on the surface of Pt (111) single crystal substrate, and the interaction between VOPc molecules and the surface of substrate is weak. Therefore, the interaction between VOPc molecules and the surface of substrate is only Van der Waals force.
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Qin JIANG, Hiroyuki NAKANO, Goro SAWA, Yoshiyuki UCHIDA, Kenzo KOJIMA, ...
2004 Volume 47 Issue 3 Pages
212-215
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Vanadyl-Phthalocyanine (VOPc) thin films were fabricated on KC1 (100) substrate by molecular beam epitaxy. The morphologies of VOPc thin films fabricated under different preparation conditions were investigated using Vis/UV spectra, SEM images and the third order nonlinear optical properties were measured with Maker fringe. The morphologies of VOPc thin films prepared with a substrate temperature maintained at 150°C transit from epitaxy to being a pseudomorphic layer with the increase in thickness. However, maintained at 200°C, they change from epitaxy to a deformed layer with the increase in thickness. Compared with the third-order nonlinear optical characteristics of different morphologies in this study, VOPc thin film formed with a pseudomorphic layer is superior.
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Tatsuyoshi OYA, Hiroyuki NAKANO, Goro SAWA, Yoshiyuki UCHIDA, Kenzo KO ...
2004 Volume 47 Issue 3 Pages
216-219
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Vanadyl-phthalocyanine (VOPc) thin films were prepared by molecular beam epitaxy (MBE) on polyethylenetelephthalate (PET) film. The morphologies and nonlinear optical properties of VOPc thin films were investigated with UV/Vis spectra, AFM images and the incident angle dependence of second harmonic (SH) and third harmonic (TH) intensities measured by Marker fringe. The UV/Vis spectra of samples 1 to 4 have an absorption peak at 830 nm. Therefore, the phase morphology of samples 1 to 4 is Phase II. The third optical susceptibility (χ
(3) ) estimated from the maximum TH intensity is 7.5 × 10
-8 esu. From the χ
(3) value obtained, the VOPc thin film fabricated on PET substrate can be applied in optical devices such as optical switching so on.
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Masaomi SUEHIRO, Satoshi WATANABE, Takeshi TANAKA, Toshinori TAKAGI
2004 Volume 47 Issue 3 Pages
220-223
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Amorphous carbon films were deposited on polyethylene terephthalate (PET) films by plasma-based ion implantation (PBII). The effect of the rf power of an external inductively coupled rf field on the characteristics of the amorphous carbon films is examined.
The oxygen transmission rate was measured as an index of the oxygen barrier effectiveness of polyethylene terephthalate films using a MOCON instrument (OX-TRAN 2/20). X-ray photoelectron spectroscopy and laser Raman spectrometry were employed to analyze the structure and chemical bonding state of the amorphous carbon layers.
The carbon layer reduced the oxygen transmission rate by up to 100 times when compared to untreated PET films for a carbon layer thickness of 20-110 nm. The thickness of the carbon layer decreased with increasing rf power, however this did not change the oxygen transmission rate. In future work, the relationship between rf power, the carbon layer thickness and oxygen transmission rate will be considered.
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Akio SUZUKI, Mitsuhiro YASUI, Takanori AOKI, Tatsuhiko MATSUSHITA, Mas ...
2004 Volume 47 Issue 3 Pages
224-227
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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β-FeSi
2 thin films were deposited on Si (111) by a pulsed laser deposition using a Nd : YAG laser. It was identified from XRD spectra of the as-deposited films that β-FeSi
2 (220) and β-FeSi
2 (202) were grown epitaxially on the Si (111) substrate. It was found that the crystallinity of the films improved through a laser annealing process making use of the Nd : YAG laser with the low power density.
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Daisuke MATSUNAKA, Hideaki KASAI, Wilson Agerico DIÑO, Hiroshi ...
2004 Volume 47 Issue 3 Pages
228-231
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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We theoretically investigate the effects of nonmagnetic impurities on the properties of high-
Tc cuprate superconductors, on the basis of the d-p model, within the fluctuation-exchange approximation and the coherent potential approximation. The obtained reduction of
Tc is consistent with the experimental values. We find a large reduction in the
Tc at the low doping concentrations corresponding to the optimum regime.
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Tomoya KISHI, Hideaki KASAI, Hiroshi NAKANISHI, Wilson Agerico DI&Ntil ...
2004 Volume 47 Issue 3 Pages
232-234
Published: March 20, 2004
Released on J-STAGE: January 30, 2010
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We investigate the electronic band structures of Fe thin films on Cu (111), based on the density functional theory. We find some states which spatial distributions are localized around the Fe thin films. These surface localized states exist in the d band of Fe, and they seem to be hybridized scarcely with Cu surface. On the basis of these results, we discuss the possibility of spin polarized transport through the thin films.
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Syuichi OGAWA, Yuji TAKAKUWA
2004 Volume 47 Issue 3 Pages
235-238
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Real-time reflection high energy electron diffraction combined with Auger electron spectroscopy (RHEED-AES) was applied to investigate the oxide growth kinetics during initial oxidation on Si (001) 2 × 1 and Si (111) 7 × 7 surfaces. The correlation between the amount of adsorbed oxygen atoms obtained from O KLL Auger electron intensity and the unoxidized surface area estimated from RHEED spot intensities due to 2 × 1 or 7 × 7 structure revealed that adsorbed oxygen was able to migrate on the Si (111) 7 × 7 surface during Langmuir-type adsorption at 580°C, leading to nucleation and lateral growth of oxide as in the oxidation mode of two-dimensional oxide island growth appearing at higher temperatures, while growth of oxide during Langmuir-type adsorption on the Si (001) 2 × 1 surface at 576°C progressed at the random sites where O
2 adsorption took place.
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Hajime YOSHIDA, Yuji YAMAUCHI, Yuko HIROHATA, Takashi ARAI, Satoshi SU ...
2004 Volume 47 Issue 3 Pages
239-242
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Hydrogen retention in carbon dust produced by hydrogen discharges in JT-60 was investigated to estimate the tritium inventory for the next generation of fusion reactors such as ITER. Several types of dust-like pieces were collected from the vacuum vessel, flake-like carbon dust, graphite, and metal pieces. The amount of retained hydrogen in the flake-like carbon dust was two orders of magnitude larger than that of the other samples. The hydrogen concentration of the flake-like carbon dust was less than 0.04 in the atomic ratio of H/C. This value is one order of magnitude smaller than that of carbon dust produced in the large tokamak, JET. This difference can be explained by the wall temperature in JT-60 being higher than in JET. The surface morphology and atomic compositions were also examined for characterization of the collected samples.
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Arifumi OKADA, Ken'ya AKAISHI, Kazuyuki UEDA
2004 Volume 47 Issue 3 Pages
243-246
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Time-of-flight electron stimulated desorption (TOF-ESD) has been performed to investigate desorption behavior of hydrogen on the surface of V-Ti-Ni alloy. The sample was exposed to hydrogen and oxygen before TOF-ESD measurements. From changes of H
+ yields with primary electron energy, the threshold energies of H
+ desorptions were estimated to be about 20 eV for hydrogen-exposed sample, and about 16 eV for oxygen-exposed sample. In case of O
+ desorption, inflections at the energy-yield curves correspond to Ti 3
s, V 3
s and Ni 3
p binding energies. In contrast, in the relation between H
+ yields and primary energy, any inflections were not observed for both hydrogen- and oxygen-exposed samples. In case of 200 L oxygen exposure, both H
+ and O
+ yields were significantly reduced showing oxidation of the sample.
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Shizuka KOIZUMI, Shoji TAKAGI, Tetsuji GOTOH
2004 Volume 47 Issue 3 Pages
247-250
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Permeation of hydrogen into the molybdenum disulfide crystal (MoS
2) in the hydrogen atmosphere is investigated from a view point of gas release by cleavage. MoS
2 crystals are exposed to H
2 or D
2 gas at temperatures between RT and 600°C, followed by the cleavage at the same temperatures after evacuation of H
2 or D
2 gas. The dependence of amount of outgassing on the exposed temperature shows similar tendency in H
2 and D
2 except maximum outgassing temperature. The concentration of hydrogen in the bulk increases at the temperature of 400 or 500°C due to permeation from the surface to the bulk. Beyond the temperatures the concentration in the bulk decreases due to thermal desorption. Regardless of the exposure to D
2 gas, many D atoms are detected. The concentration of dissociated hydrogen atoms in MoS
2 depends on the exposure temperatures.
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Kaoru WADA, Motoo YOSHIDA, Tatsuo NAKAYASU, Yukio YAMATO, Norio OGIWAR ...
2004 Volume 47 Issue 3 Pages
251-254
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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3 GeV-RCS (Rapid Cycling Synchrotron) is constructed in Japan Atomic Energy Research Institute in Proton Accelerator Complex (J-PARC).
It will have been composed to the combination magnetic suspension type turbo molecular pump is used at rough pumping and ion pump is used at main pumping in 3 GeV-RCS vacuum pumping system.
However, the magnetic suspension type turbo molecular pump uses semiconductor chip for magnetic suspension control inside. This semiconductor chip has problem to use under the radiation and high temperature applications such as accelerator and semiconductor process.
The pump used for Gamma-ray irradiation experiment is magnetically suspended compound molecular pump TG1300M is designed without semiconductor chip inside.
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Nobuhiko NAKAZAWA, Kumi OURA, Guo Hua SHEN
2004 Volume 47 Issue 3 Pages
255-257
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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A sputter ion pump with the pumping cells assembled in an annular configuration is developed. The pump is characterized by following factors; 1) minimized residual magnetic field intensity at the center of annular configuration about 80 A/m, 2) high effective pumping speed larger than 0.03 m
3/s and 3) low ultimate pressure about 4 × 10
-9 Pa. The design is suited for pumping the electron beam equipment such as scanning electron microscope, etc.
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Shinichiro MICHIZONO, Toshihiro MATSUMOTO, Katsumi NAKAO, Tateru TAKEN ...
2004 Volume 47 Issue 3 Pages
258-261
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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High power c-band (5712 MHz) rf system (40 MW, 2 μs, 50 Hz) is under consideration for the electron-linac upgrade aimed for the super KEKB project. An rf window, which isolates the vacuum and pass the rf power, is one of the most important components for the rf system. The window consists of a ceramic disk and a pill-box housing. The mixmode rf window is designed so as to decrease the electric field on the periphery of the ceramic disk. A resonant ring is assembled in order to examine the high-power transmission test. The window was tested up to the transmission power of 160 MW. The rf losses are also measured during the rf operation.
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Ken-ichi KANAZAWA, Shigeki KATO, Yusuke SUETSUGU, Hiromi HISAMATSU, Ma ...
2004 Volume 47 Issue 3 Pages
262-264
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Described are several technical issues of a vacuum system for high energy storage rings. A vacuum chamber (beam duct) contains a charged particle beam, which brings a variety of problems to the system as increasing the beam current.
The beam excites intense high-frequency electro-magnetic waves, for example, that lead to heating and discharges at several vacuum components. Pulsed high wall currents accompanied with the beam are also likely to result in discharges at insufficient electric connections.
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Yoshiharu KAKEHI, Kazuo SATOH, Tsutom YOTSUYA
2004 Volume 47 Issue 3 Pages
265-268
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Highly c-axis oriented films of Mg-doped CuScO
2 were successfully fabricated on α-Al
2O
3 (1120) substrates using a pulsed laser deposition method. X-ray pole figure analysis and RHEED observation showed that the films had twin boundaries. The electrical resistivity of the films was significantly decreased by oxygen radical annealing treatments. The lowest electrical resistivity at room temperature was 3.2 × 10
-1 Ω·cm, and the temperature dependence showed semiconducting behavior. The p-type conductivity of the film was confirmed by the Seebeck measurement. The optical transmittance was greater than 60% in the visible/near-infrared region.
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Kazuto KOIKE, Tomonori KOMURO, Kenji HAMA, Hi-izu OCHI, Ken-ichi OGATA ...
2004 Volume 47 Issue 3 Pages
269-272
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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Molecular beam epitaxial growth of the widegap Zn
1-xMg
xO alloys on Si (111) substrates is reported. A series of single-phase wurtzite Zn
1-xMg
xO alloys with Mg-content up to
x = 0.43 are successfully obtained. It is revealed by x-ray diffraction measurement that further increase from the Mg-content promotes inclusion of rocksalt Zn
1-xMg
xO alloys. Room-temperature cathodoluminescece spectra from these Zn
1-xMg
xO alloys show a blueshift of peak energy with increasing Mg-content.
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Yukio INOKUTI
2004 Volume 47 Issue 3 Pages
273-276
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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To clarify the crack morphology after 180°bend-forming and bulge press-forming of Ti films deposited on Goss single crystalof silicon steel, Ti coating by the hollow cathode discharge (HCD) method was done on polished single crystal sheets, and then the Ti-coated samples were 180°bend-formed or bulge press-formed, and then observed by the scanning electron microscope.
Ti-coated Goss silicon steel sample showed no distinctive crack in Ti films on steel sheet, on which slip lines at intervals of 15 μm to the [1210]
Ti direction could be observed in a rectangular-like morphology 1025μm in width and 15 60 μm in length.
The slip morphology of bulge press-forming of Ti films was different from that of 180° bend-forming; the former process produced slips and kinks but no distictive cracks due to the creation of a complicated slips systems arising from areal deformation, the latter process produced fine single slips due to the creation of a single system arising unidirectional deformation.
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Koji TANAKA, Takeo NAKANO, Shigeru BABA
2004 Volume 47 Issue 3 Pages
277-280
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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The copper atomic density within the sputter plasma and its dependence on Target-Substrate (T-S) distance has been investigated using the optical emission spectroscopy (OES). It has been understood that the atomic density of copper can be evaluated from the intensity ratio of two emission lines at 510.6 nm and 324.8 nm both from Cu neutral. At high atomic density environment, the intensity ratio
I510/
I324 becomes larger because the 324.8 nm emission is absorbed by the environmental copper atoms at ground state. In this study, we changed the T-S distance within 3575 mm, and measured the optical emission from the side along the line fixed at 1 cm away from the target surface. At pressures larger than 5 Pa, the intensity ratio increased by increasing the T-S distance, which denoted the increase of atomic density between the target and the substrate holder. It should originate from the diffusion-like atomic transport in which the substrate holder worked as the absorbing boundary.
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Tatsuya BANNO
2004 Volume 47 Issue 3 Pages
281-284
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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A microwave launcher with a ring slot has been designed, allowing a UHV viewing port to be utilized as a dielectric material in order to induce high-density plasma with the surface wave mode in a UHV compatible chamber. Electrostatic probe measurements on the plasma show that the plasma density distribution results from an intensive ionization rate in the vicinity of the dielectric/plasma interface and from the ambipolar diffusion. When nitrogen is mixed to argon gas, the plasma density remains almost constant as a result of the descrete surface mode, whereas the atomic nitrogen density varies in proportion to the nitrogen partial pressure.
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Chikara ICHIHARA, Akira KOBAYASHI, Yasuhito GOTOH, Ken-ichi INOUE, Hir ...
2004 Volume 47 Issue 3 Pages
285-288
Published: March 20, 2004
Released on J-STAGE: October 20, 2009
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A new type of ion source, micro gas jet (MGJ) ion source, was proposed, which can achieve high transport efficiency in the beam focusing optics system with a very small ion beam at the starting point. The MGJ ion source consists of an anode, a cathode, and an extractor. The anode has a micro aperture as a material gas inlet, and separates between a high pressure and a high vacuum areas. The material gas jet going out from the aperture is ionized by DC voltage applied between the anode and the cathode, and then extracted by an extraction voltage. We reported experimental results on the discharge phenomena in the vicinity of the micro aperture. A relationship was found between the threshold voltage for the discharge in the inhomogeneous pressure region and effective
pd (where
p is the pressure,
d is the distance between electrodes), which was not just
pd, like
Pashen's law.
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