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Volume 24, Issue 2
Displaying 1-4 of 4 articles from this issue
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Tadashi SHIOSAKI, Masaru SHIMIZU, Shinzo OHNISHI, Akira KAWABATA1981 Volume 24 Issue 2 Pages 49-59
Published: February 20, 1981
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSZnO films with an excellent c-axis orientation, transparancy, and surface flatness have been prepared by high deposition-rate rf planar magnetron sputtering. The optical waveguide loss for the TE0 mode of He-Ne 6328 Å line is as low as 2.0 dB/cm in a 4.2 μm thick film without postsputtering treatment. Single-crystalline ZnO films have been grown epitaxial onto sapphire substrates in a ZnO-H2-H2O-O2 system. In this growth, water vapor and intermediately-sputter-deposited very-thin ZnO epitaxial layer are very important to grow ZnO films with an optically flat surface. The optical waveguide loss for the TE0 mode (6328 Å) is as low as 0.7 dB/cm in a 2.57 μm thick film without postgrowth treatment.View full abstractDownload PDF (2102K) -
Tetsuya OGUSHI, Wataru SAKAMOTO1981 Volume 24 Issue 2 Pages 60-66
Published: February 20, 1981
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSSuperconducting thin films (Nb3Ge, Nb3Si and Nb) have been prepared in a chamber cooled with liquid N2 at high rate by a magnetron sputtering method.
Following results were obtained.
(a) The chamber wall acts as a cryo-pump, trapping impurity gas during sputtering so that bell jar was completely separated from a pumping system to obtain environment free from oil. Nb films of three nine were obtained.
(b) Just after a deposition, thermal quenching down to 80 K was performed by a thermal conduction of sample holder which contact with liquid N2 container. This method was tried for the first time. It was effective to depress an undersirous stable phase for preparing metastable Nb3Ge and Nb3Si. As a result, production of Nb3Ge become easy and Nb3Si was obtained with high TC nearly as high as by the explosion method.View full abstractDownload PDF (1374K) -
Minoru SUZUKI, Toshiaki MURAKAMI, Takahiro INAMURA1981 Volume 24 Issue 2 Pages 67-75
Published: February 20, 1981
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSSuperconducting BaPb1-xBixO3 thin films were successfully prepared by RF diode sputtering with a relatively high deposition rate of 50-120 Å/min and subsequent heat treatments above 500 °C. Their superconducting transition onsets are about 8K. Crystalline films were deposited even at low substrate temperature of about 100 °C, and they had a strong tendency to grow with the orientation (200) of the cubic perovskite structure.
It was found that high oxygen partial pressure during discharge is a requisite factor for the preparation of BaPb1-xBixO3 thin films. When oxygen partial pressure is higher, the annealed films have the lower resistivities, the higher superconducting transition temperature and the sharper transitions.View full abstractDownload PDF (1266K) -
Shigeru AMANO, Takashi ARAI1981 Volume 24 Issue 2 Pages 76-77
Published: February 20, 1981
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThe results of reliability tests of vacuum gasket under oxidation and deoxidation are described. The heat treatment under oixdation and deoxidation is designed for cleaning of Mo first wall in JT-60. But this kind of accomplishment for vacuum flanges to be used has not been obtained yet. So we put this plan described here into practice. We used Cu gasket and stainless O-ring in ConFlat Flange under 500°C oxidation and deoxidation and obtained satisfactory results on vacuum seal (≤1.3 × 10-11Pa · m3/s). But, in Cu gasket of ICF-253, peel is observed on the gasket surface and pinlike pieces from the gasket surface and observed around the surface of the flange. These pinlike pieces may contaminate the plasma as impurities. So Ag coating on Cu gasket may be needed in the design of JT-60.View full abstractDownload PDF (778K)
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