Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 22, Issue 12
Displaying 1-4 of 4 articles from this issue
  • Iwao OHDOMARI, Kyoichi SUGURO
    1979 Volume 22 Issue 12 Pages 411-428
    Published: December 20, 1979
    Released on J-STAGE: September 04, 2009
    JOURNAL FREE ACCESS
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  • Hajime MIZUNO, Katsuya NARUSHIMA, Gen'ichi HORIKOSHI, Osamu KONNO
    1979 Volume 22 Issue 12 Pages 429-434
    Published: December 20, 1979
    Released on J-STAGE: September 04, 2009
    JOURNAL FREE ACCESS
    A new measurement method of the mean sojourn time of molecules on the surfaces of practical vacuum systems was tested. In a vacuum system, if an adsorbed phase is equilibrated with a gas phase, mean sojourn time can be obtained from measured time constant of evacuation and geometrical time constant (V/S) of the vacuum system.
    Mean sojourn time of C4H9OH, H2O and C2H5OH was measured on the aluminum (6063-T1) vacuum chamber. The adsorption energy of these gases, estimated from measured mean sojourn time and to τ0=10-13 sec, are a little larger than the vaporization energy of them.
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  • Michio NAGASAKA
    1979 Volume 22 Issue 12 Pages 435-440
    Published: December 20, 1979
    Released on J-STAGE: January 22, 2010
    JOURNAL FREE ACCESS
    By means of ISS technique, in-depth profiles were made of the Au (800 Å) / Cu (300 Å) double layer films before and after heating in vacuum or 10.6 kPa of oxygen at 163, 202 and 250°C. Prior to heating, small amounts of copper were found on the surface but not in the bulk of gold. The films were found to be homogenious Au-Cu films after heating in vacuum at 250°C for 1000 min. On the other hand, heating the double layer films in oxygen atmosphere resulted in an inverted structure, i.e., the gold layer was found to lie beneath a copper oxide overlayer. No gold was detected in the copper oxide overlayer, but some amounts of copper oxide were found in the gold underlayer.
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  • Hidetoshi OHEDA
    1979 Volume 22 Issue 12 Pages 441-446
    Published: December 20, 1979
    Released on J-STAGE: September 04, 2009
    JOURNAL FREE ACCESS
    The modulated photocurrent in amorphous semiconductors is analyzed for the trap-limited case with using the simplified model. It is understood that the phase shift consists of two parts. One of them is the result of the thermal interaction of a photocarrier with the localized states. The other phase shift appears when an exciting photon energy is smaller than the band gap. This phase shift correlates with the presence of two kinds of processes for generating photocarriers. The analytical result can explain quantitatively the exciting photon energy dependence and the modulating frequency dependence of the measured phase shift of amorphous As2Se3 and Se.
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